Postannealing effect of GaN on reactive ion beam pre-treated sapphire

Sang Jin Lee, Dong Jin Byun, Jaejung Ko, Chang Hee Hong, Gyeungho Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Previous study showed that the reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in GaN film. Also there was an amorphous phase remaining at the interface region after the GaN deposition at high temperature. Postannealing process was employed to see the structural change due to the recrystallization of the remaining amorphous phase, and the postannealing effect on electrical property of the GaN thin film on RIB treated sapphire (0001) substrate. FWHM of DCXRD spectra and hall mobility of the specimen showed the variation with the various postannealing time at 1000 °C in N2 atmosphere. For the postannealed specimen, FWHM of DCXRD reduced about 50arc-sec and the mobility increased about 80 cm2/V sec. The postannealed specimen with the best mobility was compared with not annealed sample by TEM and observe the decrease of lattice strain and reduction of dislocation density about 56 ∼ 59 %. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume39
Issue numberSUPPL. Part 1
Publication statusPublished - 2001 Dec 1

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sapphire
ion beams
pretreatment
metalorganic chemical vapor deposition
electrical properties
atmospheres
transmission electron microscopy
annealing
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Postannealing effect of GaN on reactive ion beam pre-treated sapphire. / Lee, Sang Jin; Byun, Dong Jin; Ko, Jaejung; Hong, Chang Hee; Kim, Gyeungho.

In: Journal of the Korean Physical Society, Vol. 39, No. SUPPL. Part 1, 01.12.2001.

Research output: Contribution to journalArticle

Lee, Sang Jin ; Byun, Dong Jin ; Ko, Jaejung ; Hong, Chang Hee ; Kim, Gyeungho. / Postannealing effect of GaN on reactive ion beam pre-treated sapphire. In: Journal of the Korean Physical Society. 2001 ; Vol. 39, No. SUPPL. Part 1.
@article{453b5228235e4821b6fe5261eed065d5,
title = "Postannealing effect of GaN on reactive ion beam pre-treated sapphire",
abstract = "Previous study showed that the reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in GaN film. Also there was an amorphous phase remaining at the interface region after the GaN deposition at high temperature. Postannealing process was employed to see the structural change due to the recrystallization of the remaining amorphous phase, and the postannealing effect on electrical property of the GaN thin film on RIB treated sapphire (0001) substrate. FWHM of DCXRD spectra and hall mobility of the specimen showed the variation with the various postannealing time at 1000 °C in N2 atmosphere. For the postannealed specimen, FWHM of DCXRD reduced about 50arc-sec and the mobility increased about 80 cm2/V sec. The postannealed specimen with the best mobility was compared with not annealed sample by TEM and observe the decrease of lattice strain and reduction of dislocation density about 56 ∼ 59 {\%}. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.",
author = "Lee, {Sang Jin} and Byun, {Dong Jin} and Jaejung Ko and Hong, {Chang Hee} and Gyeungho Kim",
year = "2001",
month = "12",
day = "1",
language = "English",
volume = "39",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. Part 1",

}

TY - JOUR

T1 - Postannealing effect of GaN on reactive ion beam pre-treated sapphire

AU - Lee, Sang Jin

AU - Byun, Dong Jin

AU - Ko, Jaejung

AU - Hong, Chang Hee

AU - Kim, Gyeungho

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Previous study showed that the reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in GaN film. Also there was an amorphous phase remaining at the interface region after the GaN deposition at high temperature. Postannealing process was employed to see the structural change due to the recrystallization of the remaining amorphous phase, and the postannealing effect on electrical property of the GaN thin film on RIB treated sapphire (0001) substrate. FWHM of DCXRD spectra and hall mobility of the specimen showed the variation with the various postannealing time at 1000 °C in N2 atmosphere. For the postannealed specimen, FWHM of DCXRD reduced about 50arc-sec and the mobility increased about 80 cm2/V sec. The postannealed specimen with the best mobility was compared with not annealed sample by TEM and observe the decrease of lattice strain and reduction of dislocation density about 56 ∼ 59 %. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

AB - Previous study showed that the reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in GaN film. Also there was an amorphous phase remaining at the interface region after the GaN deposition at high temperature. Postannealing process was employed to see the structural change due to the recrystallization of the remaining amorphous phase, and the postannealing effect on electrical property of the GaN thin film on RIB treated sapphire (0001) substrate. FWHM of DCXRD spectra and hall mobility of the specimen showed the variation with the various postannealing time at 1000 °C in N2 atmosphere. For the postannealed specimen, FWHM of DCXRD reduced about 50arc-sec and the mobility increased about 80 cm2/V sec. The postannealed specimen with the best mobility was compared with not annealed sample by TEM and observe the decrease of lattice strain and reduction of dislocation density about 56 ∼ 59 %. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

UR - http://www.scopus.com/inward/record.url?scp=0035542119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035542119&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035542119

VL - 39

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. Part 1

ER -