TY - JOUR
T1 - Power and temperature dependent magneto-photoluminescence of the asymmetric double layers of quantumdots
AU - Lee, Hakjoon
AU - Yoo, Taehee
AU - Lee, Sanghoon
AU - Dobrowolska, M.
AU - Furdyna, J. K.
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) by Mid-career Researcher Program through the NRF grant funded by the Ministry of Education, Science, and Technology (no. 2009-0085028 ); and by the National Science Foundation Grant DMR10-05851 .
PY - 2011/5/15
Y1 - 2011/5/15
N2 - Excitation power and temperature dependent magneto-photoluminescence experiments have been performed on a double-layer quantum dot (QD) system, in which two QD layers are composed of CdSe and CdZnSe layers. The photoluminescence (PL) peaks from two QD layers are well resolved in the spectra. The relative PL intensity of the two QD layers depends strongly on excitation power, indicating carrier transfer between the two QD layers. The intensity of the PL peak undergoes a significant change when one circular polarization is selected under a magnetic field. Specifically, the PL from both QD layers shows a stronger intensity for the σ- than for the σ circular polarizations due to the spin polarization of the carriers in the presence of a magnetic field. The difference of PL intensity between the two polarizations showed a significant dependence both on excitation power and temperature. Furthermore, the degree of polarization from the CdSe QDs was much larger than that from the CdZnSe QDs. Such polarization phenomena in PL effects are discussed in terms of thermal effects and spin interactions between the carriers in the pairs ofQDs.
AB - Excitation power and temperature dependent magneto-photoluminescence experiments have been performed on a double-layer quantum dot (QD) system, in which two QD layers are composed of CdSe and CdZnSe layers. The photoluminescence (PL) peaks from two QD layers are well resolved in the spectra. The relative PL intensity of the two QD layers depends strongly on excitation power, indicating carrier transfer between the two QD layers. The intensity of the PL peak undergoes a significant change when one circular polarization is selected under a magnetic field. Specifically, the PL from both QD layers shows a stronger intensity for the σ- than for the σ circular polarizations due to the spin polarization of the carriers in the presence of a magnetic field. The difference of PL intensity between the two polarizations showed a significant dependence both on excitation power and temperature. Furthermore, the degree of polarization from the CdSe QDs was much larger than that from the CdZnSe QDs. Such polarization phenomena in PL effects are discussed in terms of thermal effects and spin interactions between the carriers in the pairs ofQDs.
KW - Characterization
KW - Low dimensional structures
KW - Molecular beam epitaxy
KW - Semiconducting IIVI materials
UR - http://www.scopus.com/inward/record.url?scp=79958007458&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.09.079
DO - 10.1016/j.jcrysgro.2010.09.079
M3 - Article
AN - SCOPUS:79958007458
SN - 0022-0248
VL - 323
SP - 172
EP - 175
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -