Power MOS having superior electrical characteristics

D. J. Kim, Man Young Sung, E. G. Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages399-402
Number of pages4
ISBN (Print)0780377494, 9780780377493
DOIs
Publication statusPublished - 2003
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: 2003 Dec 162003 Dec 18

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
CountryHong Kong
CityTsimshatsui, Kowloon
Period03/12/1603/12/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kim, D. J., Sung, M. Y., & Kang, E. G. (2003). Power MOS having superior electrical characteristics. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 399-402). [1283559] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283559

Power MOS having superior electrical characteristics. / Kim, D. J.; Sung, Man Young; Kang, E. G.

2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 399-402 1283559.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, DJ, Sung, MY & Kang, EG 2003, Power MOS having superior electrical characteristics. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283559, Institute of Electrical and Electronics Engineers Inc., pp. 399-402, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 03/12/16. https://doi.org/10.1109/EDSSC.2003.1283559
Kim DJ, Sung MY, Kang EG. Power MOS having superior electrical characteristics. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 399-402. 1283559 https://doi.org/10.1109/EDSSC.2003.1283559
Kim, D. J. ; Sung, Man Young ; Kang, E. G. / Power MOS having superior electrical characteristics. 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 399-402
@inproceedings{693d6106ea044a74acf26404354a5e8e,
title = "Power MOS having superior electrical characteristics",
author = "Kim, {D. J.} and Sung, {Man Young} and Kang, {E. G.}",
year = "2003",
doi = "10.1109/EDSSC.2003.1283559",
language = "English",
isbn = "0780377494",
pages = "399--402",
booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Power MOS having superior electrical characteristics

AU - Kim, D. J.

AU - Sung, Man Young

AU - Kang, E. G.

PY - 2003

Y1 - 2003

UR - http://www.scopus.com/inward/record.url?scp=84946403615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946403615&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2003.1283559

DO - 10.1109/EDSSC.2003.1283559

M3 - Conference contribution

AN - SCOPUS:84946403615

SN - 0780377494

SN - 9780780377493

SP - 399

EP - 402

BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

ER -