Power MOS having superior electrical characteristics

D. J. Kim; Man Young Sung; E. G. Kang

doi:10.1109/EDSSC.2003.1283559

Power MOS having superior electrical characteristics

D. J. Kim, Man Young Sung, E. G. Kang

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	399-402
Number of pages	4
ISBN (Print)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283559
Publication status	Published - 2003
Event	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong Duration: 2003 Dec 16 → 2003 Dec 18

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/Territory	Hong Kong
City	Tsimshatsui, Kowloon
Period	03/12/16 → 03/12/18

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EDSSC.2003.1283559

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Kim, DJ, Sung, MY & Kang, EG 2003, Power MOS having superior electrical characteristics. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283559, Institute of Electrical and Electronics Engineers Inc., pp. 399-402, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 03/12/16. https://doi.org/10.1109/EDSSC.2003.1283559

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title = "Power MOS having superior electrical characteristics",

author = "Kim, {D. J.} and Sung, {Man Young} and Kang, {E. G.}",

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isbn = "0780377494",

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booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

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note = "IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 ; Conference date: 16-12-2003 Through 18-12-2003",

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AU - Sung, Man Young

AU - Kang, E. G.

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BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Y2 - 16 December 2003 through 18 December 2003

ER -

Power MOS having superior electrical characteristics

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ASJC Scopus subject areas

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