Power MOS having superior electrical characteristics

D. J. Kim, Man Young Sung, E. G. Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages399-402
Number of pages4
ISBN (Print)0780377494, 9780780377493
DOIs
Publication statusPublished - 2003
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: 2003 Dec 162003 Dec 18

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
CountryHong Kong
CityTsimshatsui, Kowloon
Period03/12/1603/12/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kim, D. J., Sung, M. Y., & Kang, E. G. (2003). Power MOS having superior electrical characteristics. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 399-402). [1283559] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283559