Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.

Original languageEnglish
Pages (from-to)1443-1447
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
Publication statusPublished - 2000 May
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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