TY - JOUR
T1 - Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys
AU - Peiris, F. C.
AU - Lee, S.
AU - Bindley, U.
AU - Furdyna, J. K.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2000/5
Y1 - 2000/5
N2 - The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.
AB - The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.
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U2 - 10.1116/1.591400
DO - 10.1116/1.591400
M3 - Article
AN - SCOPUS:0034187285
SN - 1071-1023
VL - 18
SP - 1443
EP - 1447
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 3
ER -