Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

F. C. Peiris, Sang Hoon Lee, U. Bindley, J. K. Furdyna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.

Original languageEnglish
Pages (from-to)1443-1447
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
Publication statusPublished - 2000 May 1
Externally publishedYes

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Ternary alloys
Molecular beam epitaxy
Semiconductor materials
Epilayers
Prisms
Refraction
Chemical analysis
Calibration
Uncertainty
II-VI semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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abstract = "The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5{\%}, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.",
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AU - Peiris, F. C.

AU - Lee, Sang Hoon

AU - Bindley, U.

AU - Furdyna, J. K.

PY - 2000/5/1

Y1 - 2000/5/1

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AB - The composition and the thickness of II-VI semiconductor ternary alloys is determined simultaneously using the prism coupler technique. This approach, which determines the indices of refraction n with high precision and also the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families, Zn1-xCdxSe, Zn1-xMgxSe, Zn1-xBexSe, Zn1-xMnxSe, and ZnSe1-xTex. It can generate a calibration between n and the alloy composition and the growth rates are obtained concurrently.

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