Precise control of defects in graphene using oxygen plasma

Geonyeop Lee, Ji Hyun Kim, Kyeounghak Kim, Jeong Woo Han

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The authors report on a facile method for introducing defects in graphene in a controlled manner. Samples were mounted face down between supports, and exposed to oxygen plasma in a reactive ion etching (RIE) system. Defect density and the rate of defect formation in graphene were analyzed according to the oxygen flow rates and power conditions, using Raman spectroscopy. The mechanism of defect formation was systematically investigated via both experiment and density functional theory (DFT) calculation. Based on our DFT results, sp<sup>3</sup> oxygen in the epoxide form would most likely be induced in pristine graphene after exposure to the oxygen plasma. Defect engineering through the fine tuning of the graphene disorder using a conventional RIE system has great potential for use in various graphene-based applications.

Original languageEnglish
Article number060602
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume33
Issue number6
DOIs
Publication statusPublished - 2015 Nov 1

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Graphite
oxygen plasma
Graphene
graphene
Oxygen
Plasmas
Defects
defects
Reactive ion etching
Density functional theory
etching
density functional theory
epoxy compounds
Defect density
Epoxy Compounds
oxygen
Raman spectroscopy
ions
flow velocity
Tuning

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Precise control of defects in graphene using oxygen plasma. / Lee, Geonyeop; Kim, Ji Hyun; Kim, Kyeounghak; Han, Jeong Woo.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 6, 060602, 01.11.2015.

Research output: Contribution to journalArticle

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