Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors

Junyoung Jin, Jihoon Kyhm, Do Kyung Hwang, Kyeong Seok Lee, Tae Yeon Seong, Gyu Weon Hwang

Research output: Contribution to journalArticlepeer-review

Abstract

We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 × 1012 Jones with a responsivity of up to 1.895 × 103 A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (μτ) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalACS Applied Nano Materials
Volume4
Issue number1
DOIs
Publication statusPublished - 2021 Jan 22

Keywords

  • PbS quantum dots
  • RTA
  • annealing
  • infrared photodetectors
  • oxidation

ASJC Scopus subject areas

  • Materials Science(all)

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