Precise investigation of domain pinning energy in GaMnAs using planar hall effect and magnetoresistance measurements

D. Y. Shin, S. J. Chung, S. Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The planar Hall effect (PHE) and magnetoresistance (MR) measurements have been carried out on a GaMnAs ferromagnetic semiconductor. The PHE and MR spectra exhibit interesting two-step magnetization switching behavior arising from the magnetic anisotropy properties of the system. By fitting the angle-dependent planar Hall resistance (PHR) data taken at 5 kG with the Stoner-Wohlfarth model, the cubic and uniaxial anisotropy constants were independently obtained. The anisotropy constants lead to the precise determination of easy axis direction, which turns out to be in good agreement with the easy axis determined from the angular plot of the switching field. The domain pinning energies were further obtained by fitting the angle dependence of the switching field, including the effect of uniaxial anisotropy.

Original languageEnglish
Pages (from-to)3025-3027
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
Publication statusPublished - 2007 Jun

Keywords

  • (Ga,Mn)As
  • Magnetic anisotropy
  • Magnetic semiconductor
  • Magnetoresistance
  • Pinning energy
  • Planar Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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