Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance

Kwang Chon Kim, Sang Soon Lim, Seung Hwan Lee, Junpyo Hong, Deok Yong Cho, Ahmed Yousef Mohamed, Chong Min Koo, Seung Hyub Baek, Jin Sang Kim, Seong Keun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Grafting nanotechnology on thermoelectric materials leads to significant advances in their performance. Creation of structural defects including nano-inclusion and interfaces via nanostructuring achieves higher thermoelectric efficiencies. However, it is still challenging to optimize the nanostructure via conventional fabrication techniques. The thermal instability of nanostructures remains an issue in the reproducibility of fabrication processes and long-term stability during operation. This work presents a versatile strategy to create numerous interfaces in a thermoelectric material via an atomic-layer deposition (ALD) technique. An extremely thin ZnO layer was conformally formed via ALD over the Bi0.4Sb1.6Te3 powders, and numerous heterogeneous interfaces were generated from the formation of Bi0.4Sb1.6Te3ZnO coreshell structures even after high-temperature sintering. The incorporation of ALD-grown ZnO into the Bi0.4Sb1.6Te3 matrix blocks phonon propagation and also provides tunability in electronic carrier density via impurity doping at the heterogeneous grain boundaries. The exquisite control in the ALD cycles provides a high thermoelectric performance of zT = 1.50 0.15 (at 329360 K). Specifically, ALD is an industry compatible technique that allows uniform and conformal coating over large quantities of powders. The study is promising in terms of the mass production of nanostructured thermoelectric materials with considerable improvements in performance via an industry compatible and reproducible route.

Original languageEnglish
Pages (from-to)7146-7154
Number of pages9
JournalACS Nano
Volume13
Issue number6
DOIs
Publication statusPublished - 2019 Jun 25
Externally publishedYes

Fingerprint

Atomic layer deposition
atomic layer epitaxy
engineering
thermoelectric materials
Powders
Nanostructures
industries
Fabrication
fabrication
thermal instability
nanotechnology
Nanotechnology
Carrier concentration
Industry
sintering
Grain boundaries
Sintering
grain boundaries
routes
Doping (additives)

Keywords

  • atomic layer deposition
  • bismuth antimony telluride
  • heterogeneous interface
  • p-type
  • thermoelectric
  • ZnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, K. C., Lim, S. S., Lee, S. H., Hong, J., Cho, D. Y., Mohamed, A. Y., ... Kim, S. K. (2019). Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance. ACS Nano, 13(6), 7146-7154. https://doi.org/10.1021/acsnano.9b02574

Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance. / Kim, Kwang Chon; Lim, Sang Soon; Lee, Seung Hwan; Hong, Junpyo; Cho, Deok Yong; Mohamed, Ahmed Yousef; Koo, Chong Min; Baek, Seung Hyub; Kim, Jin Sang; Kim, Seong Keun.

In: ACS Nano, Vol. 13, No. 6, 25.06.2019, p. 7146-7154.

Research output: Contribution to journalArticle

Kim, KC, Lim, SS, Lee, SH, Hong, J, Cho, DY, Mohamed, AY, Koo, CM, Baek, SH, Kim, JS & Kim, SK 2019, 'Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance', ACS Nano, vol. 13, no. 6, pp. 7146-7154. https://doi.org/10.1021/acsnano.9b02574
Kim, Kwang Chon ; Lim, Sang Soon ; Lee, Seung Hwan ; Hong, Junpyo ; Cho, Deok Yong ; Mohamed, Ahmed Yousef ; Koo, Chong Min ; Baek, Seung Hyub ; Kim, Jin Sang ; Kim, Seong Keun. / Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance. In: ACS Nano. 2019 ; Vol. 13, No. 6. pp. 7146-7154.
@article{e06b249b915441cc8c3d764c77c6e996,
title = "Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance",
abstract = "Grafting nanotechnology on thermoelectric materials leads to significant advances in their performance. Creation of structural defects including nano-inclusion and interfaces via nanostructuring achieves higher thermoelectric efficiencies. However, it is still challenging to optimize the nanostructure via conventional fabrication techniques. The thermal instability of nanostructures remains an issue in the reproducibility of fabrication processes and long-term stability during operation. This work presents a versatile strategy to create numerous interfaces in a thermoelectric material via an atomic-layer deposition (ALD) technique. An extremely thin ZnO layer was conformally formed via ALD over the Bi0.4Sb1.6Te3 powders, and numerous heterogeneous interfaces were generated from the formation of Bi0.4Sb1.6Te3ZnO coreshell structures even after high-temperature sintering. The incorporation of ALD-grown ZnO into the Bi0.4Sb1.6Te3 matrix blocks phonon propagation and also provides tunability in electronic carrier density via impurity doping at the heterogeneous grain boundaries. The exquisite control in the ALD cycles provides a high thermoelectric performance of zT = 1.50 0.15 (at 329360 K). Specifically, ALD is an industry compatible technique that allows uniform and conformal coating over large quantities of powders. The study is promising in terms of the mass production of nanostructured thermoelectric materials with considerable improvements in performance via an industry compatible and reproducible route.",
keywords = "atomic layer deposition, bismuth antimony telluride, heterogeneous interface, p-type, thermoelectric, ZnO",
author = "Kim, {Kwang Chon} and Lim, {Sang Soon} and Lee, {Seung Hwan} and Junpyo Hong and Cho, {Deok Yong} and Mohamed, {Ahmed Yousef} and Koo, {Chong Min} and Baek, {Seung Hyub} and Kim, {Jin Sang} and Kim, {Seong Keun}",
year = "2019",
month = "6",
day = "25",
doi = "10.1021/acsnano.9b02574",
language = "English",
volume = "13",
pages = "7146--7154",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance

AU - Kim, Kwang Chon

AU - Lim, Sang Soon

AU - Lee, Seung Hwan

AU - Hong, Junpyo

AU - Cho, Deok Yong

AU - Mohamed, Ahmed Yousef

AU - Koo, Chong Min

AU - Baek, Seung Hyub

AU - Kim, Jin Sang

AU - Kim, Seong Keun

PY - 2019/6/25

Y1 - 2019/6/25

N2 - Grafting nanotechnology on thermoelectric materials leads to significant advances in their performance. Creation of structural defects including nano-inclusion and interfaces via nanostructuring achieves higher thermoelectric efficiencies. However, it is still challenging to optimize the nanostructure via conventional fabrication techniques. The thermal instability of nanostructures remains an issue in the reproducibility of fabrication processes and long-term stability during operation. This work presents a versatile strategy to create numerous interfaces in a thermoelectric material via an atomic-layer deposition (ALD) technique. An extremely thin ZnO layer was conformally formed via ALD over the Bi0.4Sb1.6Te3 powders, and numerous heterogeneous interfaces were generated from the formation of Bi0.4Sb1.6Te3ZnO coreshell structures even after high-temperature sintering. The incorporation of ALD-grown ZnO into the Bi0.4Sb1.6Te3 matrix blocks phonon propagation and also provides tunability in electronic carrier density via impurity doping at the heterogeneous grain boundaries. The exquisite control in the ALD cycles provides a high thermoelectric performance of zT = 1.50 0.15 (at 329360 K). Specifically, ALD is an industry compatible technique that allows uniform and conformal coating over large quantities of powders. The study is promising in terms of the mass production of nanostructured thermoelectric materials with considerable improvements in performance via an industry compatible and reproducible route.

AB - Grafting nanotechnology on thermoelectric materials leads to significant advances in their performance. Creation of structural defects including nano-inclusion and interfaces via nanostructuring achieves higher thermoelectric efficiencies. However, it is still challenging to optimize the nanostructure via conventional fabrication techniques. The thermal instability of nanostructures remains an issue in the reproducibility of fabrication processes and long-term stability during operation. This work presents a versatile strategy to create numerous interfaces in a thermoelectric material via an atomic-layer deposition (ALD) technique. An extremely thin ZnO layer was conformally formed via ALD over the Bi0.4Sb1.6Te3 powders, and numerous heterogeneous interfaces were generated from the formation of Bi0.4Sb1.6Te3ZnO coreshell structures even after high-temperature sintering. The incorporation of ALD-grown ZnO into the Bi0.4Sb1.6Te3 matrix blocks phonon propagation and also provides tunability in electronic carrier density via impurity doping at the heterogeneous grain boundaries. The exquisite control in the ALD cycles provides a high thermoelectric performance of zT = 1.50 0.15 (at 329360 K). Specifically, ALD is an industry compatible technique that allows uniform and conformal coating over large quantities of powders. The study is promising in terms of the mass production of nanostructured thermoelectric materials with considerable improvements in performance via an industry compatible and reproducible route.

KW - atomic layer deposition

KW - bismuth antimony telluride

KW - heterogeneous interface

KW - p-type

KW - thermoelectric

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=85068526707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068526707&partnerID=8YFLogxK

U2 - 10.1021/acsnano.9b02574

DO - 10.1021/acsnano.9b02574

M3 - Article

C2 - 31180627

AN - SCOPUS:85068526707

VL - 13

SP - 7146

EP - 7154

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 6

ER -