Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

Jong Heun Lee; Toshiyuki Mori; Ji Guang Li; Takayasu Ikegami; John Drennan; Doh Yeon Kim

doi:10.1149/1.1446873

Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al₂O₃-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO₄ during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).

Original language	English
Pages (from-to)	J35-J40
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	3
DOIs	https://doi.org/10.1149/1.1446873
Publication status	Published - 2002 Mar
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1446873

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abstract = "The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).",

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AU - Lee, Jong Heun

AU - Mori, Toshiyuki

AU - Li, Ji Guang

AU - Ikegami, Takayasu

AU - Drennan, John

AU - Kim, Doh Yeon

PY - 2002/3

Y1 - 2002/3

N2 - The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).

AB - The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).

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Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

Abstract

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