Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number3
DOIs
Publication statusPublished - 2002 Mar 1
Externally publishedYes

Fingerprint

Ytterbium
Scavenging
scavenging
ytterbium
zirconium oxides
Zirconia
Grain boundaries
heat treatment
grain boundaries
Heat treatment
sintering
Sintering
conductivity
Temperature
temperature
routes
conduction
heat
zirconium oxide

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia. / Lee, Jong Heun; Mori, Toshiyuki; Li, Ji Guang; Ikegami, Takayasu; Drennan, John; Kim, Doh Yeon.

In: Journal of the Electrochemical Society, Vol. 149, No. 3, 01.03.2002.

Research output: Contribution to journalArticle

Lee, Jong Heun ; Mori, Toshiyuki ; Li, Ji Guang ; Ikegami, Takayasu ; Drennan, John ; Kim, Doh Yeon. / Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia. In: Journal of the Electrochemical Society. 2002 ; Vol. 149, No. 3.
@article{7ad3eb472bf34a3a8103bd39240f1ac9,
title = "Precursor scavenging of resistive grain-boundary phase in 8 mol {\%} ytterbia-stabilized zirconia",
abstract = "The grain-boundary conduction of 8 mol {\%} ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).",
author = "Lee, {Jong Heun} and Toshiyuki Mori and Li, {Ji Guang} and Takayasu Ikegami and John Drennan and Kim, {Doh Yeon}",
year = "2002",
month = "3",
day = "1",
doi = "10.1149/1.1446873",
language = "English",
volume = "149",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

AU - Lee, Jong Heun

AU - Mori, Toshiyuki

AU - Li, Ji Guang

AU - Ikegami, Takayasu

AU - Drennan, John

AU - Kim, Doh Yeon

PY - 2002/3/1

Y1 - 2002/3/1

N2 - The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).

AB - The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250°C for ≥ 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500°C).

UR - http://www.scopus.com/inward/record.url?scp=0036503103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036503103&partnerID=8YFLogxK

U2 - 10.1149/1.1446873

DO - 10.1149/1.1446873

M3 - Article

AN - SCOPUS:0036503103

VL - 149

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -