Abstract
The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
Original language | English |
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Pages (from-to) | 2377-2383 |
Number of pages | 7 |
Journal | Journal of Materials Research |
Volume | 16 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2001 Aug |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering