Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

Research output: Contribution to journalArticle

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Abstract

The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

Original languageEnglish
Pages (from-to)2377-2383
Number of pages7
JournalJournal of Materials Research
Volume16
Issue number8
Publication statusPublished - 2001 Aug 1
Externally publishedYes

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Yttria stabilized zirconia
Scavenging
scavenging
yttria-stabilized zirconia
Grain boundaries
grain boundaries
Impurities
impurities
conduction
electrical resistivity
sintering
heat treatment
Sintering
grain size
Heat treatment

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia : Effect of trace concentrations of SiO2. / Lee, Jong Heun; Mori, Toshiyuki; Li, Ji Guang; Ikegami, Takayasu; Drennan, John; Kim, Doh Yeon.

In: Journal of Materials Research, Vol. 16, No. 8, 01.08.2001, p. 2377-2383.

Research output: Contribution to journalArticle

Lee, Jong Heun ; Mori, Toshiyuki ; Li, Ji Guang ; Ikegami, Takayasu ; Drennan, John ; Kim, Doh Yeon. / Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia : Effect of trace concentrations of SiO2. In: Journal of Materials Research. 2001 ; Vol. 16, No. 8. pp. 2377-2383.
@article{b69bac2316ab4452a870ad26c611669a,
title = "Precursor scavenging of the resistive grain-boundary phase in 8 mol{\%} yttria-stabilized zirconia: Effect of trace concentrations of SiO2",
abstract = "The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20{\%} of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.",
author = "Lee, {Jong Heun} and Toshiyuki Mori and Li, {Ji Guang} and Takayasu Ikegami and John Drennan and Kim, {Doh Yeon}",
year = "2001",
month = "8",
day = "1",
language = "English",
volume = "16",
pages = "2377--2383",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "8",

}

TY - JOUR

T1 - Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia

T2 - Effect of trace concentrations of SiO2

AU - Lee, Jong Heun

AU - Mori, Toshiyuki

AU - Li, Ji Guang

AU - Ikegami, Takayasu

AU - Drennan, John

AU - Kim, Doh Yeon

PY - 2001/8/1

Y1 - 2001/8/1

N2 - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

AB - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

UR - http://www.scopus.com/inward/record.url?scp=0035436227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035436227&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035436227

VL - 16

SP - 2377

EP - 2383

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 8

ER -