TY - JOUR
T1 - Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia
T2 - Effect of trace concentrations of SiO2
AU - Lee, Jong Heun
AU - Mori, Toshiyuki
AU - Li, Ji Guang
AU - Ikegami, Takayasu
AU - Drennan, John
AU - Kim, Doh Yeon
N1 - Funding Information:
J-H.L. expresses his thanks to Japan International Science and Technology Exchange Center (JISTEC), and Japan Science and Technology Corporation (JST) of Japan for a Science and Technology (STA) fellowship.
PY - 2001/8
Y1 - 2001/8
N2 - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
AB - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
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U2 - 10.1557/JMR.2001.0326
DO - 10.1557/JMR.2001.0326
M3 - Article
AN - SCOPUS:0035436227
VL - 16
SP - 2377
EP - 2383
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 8
ER -