Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

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8 Citations (Scopus)


The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

Original languageEnglish
Pages (from-to)2377-2383
Number of pages7
JournalJournal of Materials Research
Issue number8
Publication statusPublished - 2001 Aug 1
Externally publishedYes


ASJC Scopus subject areas

  • Materials Science(all)

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