Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

Jong Heun Lee; Toshiyuki Mori; Ji Guang Li; Takayasu Ikegami; John Drennan; Doh Yeon Kim

doi:10.1557/JMR.2001.0326

Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO₂

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The influence that trace concentrations of SiO₂ have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO₂-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρ_gb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρ_gb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

Original language	English
Pages (from-to)	2377-2383
Number of pages	7
Journal	Journal of Materials Research
Volume	16
Issue number	8
DOIs	https://doi.org/10.1557/JMR.2001.0326
Publication status	Published - 2001 Aug
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2",

abstract = "The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.",

author = "Lee, {Jong Heun} and Toshiyuki Mori and Li, {Ji Guang} and Takayasu Ikegami and John Drennan and Kim, {Doh Yeon}",

note = "Funding Information: J-H.L. expresses his thanks to Japan International Science and Technology Exchange Center (JISTEC), and Japan Science and Technology Corporation (JST) of Japan for a Science and Technology (STA) fellowship.",

year = "2001",

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doi = "10.1557/JMR.2001.0326",

language = "English",

volume = "16",

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journal = "Journal of Materials Research",

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T1 - Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia

T2 - Effect of trace concentrations of SiO2

AU - Lee, Jong Heun

AU - Mori, Toshiyuki

AU - Li, Ji Guang

AU - Ikegami, Takayasu

AU - Drennan, John

AU - Kim, Doh Yeon

N1 - Funding Information: J-H.L. expresses his thanks to Japan International Science and Technology Exchange Center (JISTEC), and Japan Science and Technology Corporation (JST) of Japan for a Science and Technology (STA) fellowship.

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AB - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

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Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO₂

Abstract

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