Abstract
The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 2377-2383 |
| Number of pages | 7 |
| Journal | Journal of Materials Research |
| Volume | 16 |
| Issue number | 8 |
| Publication status | Published - 2001 Aug 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
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Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia : Effect of trace concentrations of SiO2. / Lee, Jong Heun; Mori, Toshiyuki; Li, Ji Guang; Ikegami, Takayasu; Drennan, John; Kim, Doh Yeon.
In: Journal of Materials Research, Vol. 16, No. 8, 01.08.2001, p. 2377-2383.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia
T2 - Effect of trace concentrations of SiO2
AU - Lee, Jong Heun
AU - Mori, Toshiyuki
AU - Li, Ji Guang
AU - Ikegami, Takayasu
AU - Drennan, John
AU - Kim, Doh Yeon
PY - 2001/8/1
Y1 - 2001/8/1
N2 - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
AB - The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
UR - http://www.scopus.com/inward/record.url?scp=0035436227&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035436227&partnerID=8YFLogxK
M3 - Article
VL - 16
SP - 2377
EP - 2383
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 8
ER -