Abstract
The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 2377-2383 |
| Number of pages | 7 |
| Journal | Journal of Materials Research |
| Volume | 16 |
| Issue number | 8 |
| Publication status | Published - 2001 Aug 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Lee, J. H., Mori, T., Li, J. G., Ikegami, T., Drennan, J., & Kim, D. Y. (2001). Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2. Journal of Materials Research, 16(8), 2377-2383.