Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

Jong Heun Lee; Toshiyuki Mori; Ji Guang Li; Takayasu Ikegami; John Drennan; Doh Yeon Kim

doi:10.1557/JMR.2001.0326

Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO₂

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

The influence that trace concentrations of SiO₂ have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO₂-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρ_gb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρ_gb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

Original language	English
Pages (from-to)	2377-2383
Number of pages	7
Journal	Journal of Materials Research
Volume	16
Issue number	8
DOIs	https://doi.org/10.1557/JMR.2001.0326
Publication status	Published - 2001 Aug

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Lee, J. H., Mori, T., Li, J. G., Ikegami, T., Drennan, J., & Kim, D. Y. (2001). Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO₂. Journal of Materials Research, 16(8), 2377-2383. https://doi.org/10.1557/JMR.2001.0326

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abstract = "The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤ 160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, ρgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.",

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