Conventionally, profile non-uniformity has been characterized by relying on approximated profile with angle or anisotropy. In this study, a new non-uniformity model for etch profile is presented by applying a discrete wavelet to the image obtained from a scanning electron microscopy (SEM). Prediction models for wavelet-transformed data are then constructed using a back-propagation neural network. The proposed method was applied to the data collected from the etching of tungsten material. Additionally, 7 experiments were conducted to obtain test data. Model performance was evaluated in terms of the average prediction accuracy (APA) and the best prediction accuracy (BPA). To take into account randomness in initial weights, two hundred models were generated for a given set of training factors. Behaviors of the APA and BPA were investigated as a function of training factors, including training tolerance, hidden neuron, initial weight distribution, and two slopes for bipolar sigmoid and linear function. For all variations in training factors, the APA was not consistent with the BPA. The prediction accuracy was optimized using three approaches, the best model based approach, the average model based approach and the combined model based approach. Despite the largest APA of the first approach, its BPA was smallest compared to the other two approaches.
|Number of pages||7|
|Journal||International Journal of Control, Automation and Systems|
|Publication status||Published - 2004 Jun 1|
- Back-propagation neural network
- Plasma etching
ASJC Scopus subject areas
- Control and Systems Engineering