Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite

Jae-chul Lee, Ji Young Byun, Sung Bae Park, Ho In Lee

Research output: Contribution to journalArticle

138 Citations (Scopus)

Abstract

Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al4C3 in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al4C3 formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results.

Original languageEnglish
Pages (from-to)1771-1780
Number of pages10
JournalActa Materialia
Volume46
Issue number5
Publication statusPublished - 1998 Mar 2
Externally publishedYes

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Composite materials
Superconducting transition temperature
Scanning electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

Cite this

Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite. / Lee, Jae-chul; Byun, Ji Young; Park, Sung Bae; Lee, Ho In.

In: Acta Materialia, Vol. 46, No. 5, 02.03.1998, p. 1771-1780.

Research output: Contribution to journalArticle

Lee, J, Byun, JY, Park, SB & Lee, HI 1998, 'Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite', Acta Materialia, vol. 46, no. 5, pp. 1771-1780.
Lee, Jae-chul ; Byun, Ji Young ; Park, Sung Bae ; Lee, Ho In. / Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite. In: Acta Materialia. 1998 ; Vol. 46, No. 5. pp. 1771-1780.
@article{dff25c1c8bcb4f619266de9cc472ad35,
title = "Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite",
abstract = "Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al4C3 in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al4C3 formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results.",
author = "Jae-chul Lee and Byun, {Ji Young} and Park, {Sung Bae} and Lee, {Ho In}",
year = "1998",
month = "3",
day = "2",
language = "English",
volume = "46",
pages = "1771--1780",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",
number = "5",

}

TY - JOUR

T1 - Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite

AU - Lee, Jae-chul

AU - Byun, Ji Young

AU - Park, Sung Bae

AU - Lee, Ho In

PY - 1998/3/2

Y1 - 1998/3/2

N2 - Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al4C3 in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al4C3 formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results.

AB - Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al4C3 in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al4C3 formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results.

UR - http://www.scopus.com/inward/record.url?scp=0032472972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032472972&partnerID=8YFLogxK

M3 - Article

VL - 46

SP - 1771

EP - 1780

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 5

ER -