Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al4C3 in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al4C3 formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results.
|Number of pages||10|
|Publication status||Published - 1998 Mar 2|
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Metals and Alloys