Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Yiming Li, David Mann, Marco Rolandi, Woong Kim, Ant Ural, Steven Hung, Ali Javey, Jien Cao, Dunwei Wang, Erhan Yenilmez, Qian Wang, James F. Gibbons, Yoshio Nishi, Hongjie Dai

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Abstract

Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600°C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of the nanotubes are semiconductors and thus highly preferential growth of semiconducting over metallic tubes in the PECVD process. Control experiments with other nanotube materials find that HiPco nanotubes consist of ∼61% semiconductors, while laser ablation preferentially grows metallic SWNTs (∼70%). The characterization method used here should also be applicable to assessing the degree of chemical separation of metallic and semiconducting nanotubes.

Original languageEnglish
Pages (from-to)317-321
Number of pages5
JournalNano Letters
Volume4
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Li, Y., Mann, D., Rolandi, M., Kim, W., Ural, A., Hung, S., Javey, A., Cao, J., Wang, D., Yenilmez, E., Wang, Q., Gibbons, J. F., Nishi, Y., & Dai, H. (2004). Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method. Nano Letters, 4(2), 317-321. https://doi.org/10.1021/nl035097c