Preparation and analysis of amorphous carbon films deposited from (C 6H12)/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

Seungmoo Lee, Jaihyung Won, Jongsik Choi, Samseok Jang, Yeonhong Jee, Hyeondeok Lee, Dong Jin Byun

Research output: Contribution to journalArticle

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Abstract

Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6H12) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 °C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 Å/min to 2160 Å/min, and dry etch rate was decreased from 2090 Å/min to 1770 Å/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 °C to 550 °C. XPS results of ACL deposited at 550 °C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 °C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 °C was 2.24 Å, and that after cleaning in diluted HF solution (H2O:HF = 200:1), SC1 (NH4OH:H2O 2:H2O = 1:4:20) solution, and sulfuric acid solution (H2SO4:H2O2 = 6:1) was 2.28 Å, 2.30 Å and 7.34 Å, respectively. The removal amount of ACL deposited at 550 °C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 Å, 36 Å and 110 Å, respectively. These results demonstrated the viability of ACL deposited by PECVD from C6H 12 at 550 °C for application as the dry etch hard mask in fabrication of semiconductor devices.

Original languageEnglish
Pages (from-to)6737-6740
Number of pages4
JournalThin Solid Films
Volume519
Issue number20
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Masks
masks
manufacturing
chemistry
Semiconductor materials
preparation
carbon
Semiconductor devices
Plasma enhanced chemical vapor deposition
Sulfuric acid
sulfuric acid
Carbon
X ray photoelectron spectroscopy
semiconductor devices
Elastic moduli
Surface roughness
Hardness

Keywords

  • ACL
  • CH
  • Dry etch
  • Hard mask
  • PECVD
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Preparation and analysis of amorphous carbon films deposited from (C 6H12)/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process. / Lee, Seungmoo; Won, Jaihyung; Choi, Jongsik; Jang, Samseok; Jee, Yeonhong; Lee, Hyeondeok; Byun, Dong Jin.

In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6737-6740.

Research output: Contribution to journalArticle

Lee, Seungmoo ; Won, Jaihyung ; Choi, Jongsik ; Jang, Samseok ; Jee, Yeonhong ; Lee, Hyeondeok ; Byun, Dong Jin. / Preparation and analysis of amorphous carbon films deposited from (C 6H12)/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process. In: Thin Solid Films. 2011 ; Vol. 519, No. 20. pp. 6737-6740.
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abstract = "Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6H12) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 °C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 {\AA}/min to 2160 {\AA}/min, and dry etch rate was decreased from 2090 {\AA}/min to 1770 {\AA}/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 °C to 550 °C. XPS results of ACL deposited at 550 °C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 °C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 °C was 2.24 {\AA}, and that after cleaning in diluted HF solution (H2O:HF = 200:1), SC1 (NH4OH:H2O 2:H2O = 1:4:20) solution, and sulfuric acid solution (H2SO4:H2O2 = 6:1) was 2.28 {\AA}, 2.30 {\AA} and 7.34 {\AA}, respectively. The removal amount of ACL deposited at 550 °C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 {\AA}, 36 {\AA} and 110 {\AA}, respectively. These results demonstrated the viability of ACL deposited by PECVD from C6H 12 at 550 °C for application as the dry etch hard mask in fabrication of semiconductor devices.",
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AB - Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6H12) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 °C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 Å/min to 2160 Å/min, and dry etch rate was decreased from 2090 Å/min to 1770 Å/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 °C to 550 °C. XPS results of ACL deposited at 550 °C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 °C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 °C was 2.24 Å, and that after cleaning in diluted HF solution (H2O:HF = 200:1), SC1 (NH4OH:H2O 2:H2O = 1:4:20) solution, and sulfuric acid solution (H2SO4:H2O2 = 6:1) was 2.28 Å, 2.30 Å and 7.34 Å, respectively. The removal amount of ACL deposited at 550 °C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 Å, 36 Å and 110 Å, respectively. These results demonstrated the viability of ACL deposited by PECVD from C6H 12 at 550 °C for application as the dry etch hard mask in fabrication of semiconductor devices.

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