Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

Kyoungwon Kim, Yong Won Song, Jaehyeon Leem, Sang Yeol Lee, Sangsig Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.

Original languageEnglish
Pages (from-to)140-143
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1

Keywords

  • Schottky diode
  • Sol-gel
  • Thin films
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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