Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

Kyoungwon Kim, Yong Won Song, Jaehyeon Leem, Sang Yeol Lee, Sangsig Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.

Original languageEnglish
Pages (from-to)140-143
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1

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Schottky diodes
gels
preparation
electric contacts
thin films
sol-gel processes
acetates
leakage
zinc
evaporation
coatings
defects
curves
metals

Keywords

  • Schottky diode
  • Sol-gel
  • Thin films
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films. / Kim, Kyoungwon; Song, Yong Won; Leem, Jaehyeon; Lee, Sang Yeol; Kim, Sangsig.

In: Journal of the Korean Physical Society, Vol. 55, No. 1, 01.07.2009, p. 140-143.

Research output: Contribution to journalArticle

Kim, Kyoungwon ; Song, Yong Won ; Leem, Jaehyeon ; Lee, Sang Yeol ; Kim, Sangsig. / Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films. In: Journal of the Korean Physical Society. 2009 ; Vol. 55, No. 1. pp. 140-143.
@article{6673f42294a941e7b4d7f30c91c738d2,
title = "Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films",
abstract = "We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.",
keywords = "Schottky diode, Sol-gel, Thin films, ZnO",
author = "Kyoungwon Kim and Song, {Yong Won} and Jaehyeon Leem and Lee, {Sang Yeol} and Sangsig Kim",
year = "2009",
month = "7",
day = "1",
doi = "10.3938/jkps.55.140",
language = "English",
volume = "55",
pages = "140--143",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "1",

}

TY - JOUR

T1 - Preparation and analysis of schottky diodes with Au and sol-gel-processed ZnO thin films

AU - Kim, Kyoungwon

AU - Song, Yong Won

AU - Leem, Jaehyeon

AU - Lee, Sang Yeol

AU - Kim, Sangsig

PY - 2009/7/1

Y1 - 2009/7/1

N2 - We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.

AB - We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10-12A, respectively.

KW - Schottky diode

KW - Sol-gel

KW - Thin films

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=69249187751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249187751&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.140

DO - 10.3938/jkps.55.140

M3 - Article

AN - SCOPUS:69249187751

VL - 55

SP - 140

EP - 143

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1

ER -