Preparation and characterization of SrTiO3 thin films using ECR plasma assisted MOCVD

Joon Sung Lee, Han Wook Song, Dae Sung Yoon, Byung Hyuk Jun, Byoung Gon Yu, Zhong Tao Jiang, Won Jong Lee, Kwangsoo No

Research output: Contribution to journalConference article

Abstract

SrTiO3 thin films were prepared on Si(p-type 100) and Pt/SiO2/Si substrates using ECR plasma (or without ECR plasma) assisted MOCVD. Sr(TMHD)2 and Ti-isopropoxide were used as Sr and Ti metal organic sources, respectively. Perovskite SrTiO3 films were obtained at relatively low temperature of 500°C using ECR oxygen plasma. Experimental results indicated that higher deposition temperature and ECR oxygen plasma increase the crystallinity, the dielectric constant and the leakage current density. The dielectric constant and the dielectric loss were 222 and 0.04, respectively, for 1234 angstrom thin SrTiO3 film (Sr/(Sr+Ti)=0.5). The leakage current density was 3.78 × 10-7 A/cm2 at 1.0V, and the dielectric breakdown field was 0.57MV/cm. SEM analyses showed that SrTiO3 films have a uniform and fine grain structure. In terms of step coverage, a lateral step coverage of 50% at 0.8μm step (the aspect ratio was 1) was obtained with the thickness uniformity of ±0.5% and the composition uniformity of ±1.2% at 4″ wafer.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume415
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 1995 Nov 261995 Dec 1

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
oxygen plasma
Plasmas
Thin films
preparation
leakage
thin films
Leakage currents
permittivity
current density
Permittivity
Current density
Oxygen
dielectric loss
aspect ratio
crystallinity
Crystal microstructure
Dielectric losses
breakdown

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, J. S., Song, H. W., Yoon, D. S., Jun, B. H., Yu, B. G., Jiang, Z. T., ... No, K. (1996). Preparation and characterization of SrTiO3 thin films using ECR plasma assisted MOCVD. Materials Research Society Symposium - Proceedings, 415, 183-188.

Preparation and characterization of SrTiO3 thin films using ECR plasma assisted MOCVD. / Lee, Joon Sung; Song, Han Wook; Yoon, Dae Sung; Jun, Byung Hyuk; Yu, Byoung Gon; Jiang, Zhong Tao; Lee, Won Jong; No, Kwangsoo.

In: Materials Research Society Symposium - Proceedings, Vol. 415, 01.01.1996, p. 183-188.

Research output: Contribution to journalConference article

Lee, JS, Song, HW, Yoon, DS, Jun, BH, Yu, BG, Jiang, ZT, Lee, WJ & No, K 1996, 'Preparation and characterization of SrTiO3 thin films using ECR plasma assisted MOCVD', Materials Research Society Symposium - Proceedings, vol. 415, pp. 183-188.
Lee, Joon Sung ; Song, Han Wook ; Yoon, Dae Sung ; Jun, Byung Hyuk ; Yu, Byoung Gon ; Jiang, Zhong Tao ; Lee, Won Jong ; No, Kwangsoo. / Preparation and characterization of SrTiO3 thin films using ECR plasma assisted MOCVD. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 415. pp. 183-188.
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abstract = "SrTiO3 thin films were prepared on Si(p-type 100) and Pt/SiO2/Si substrates using ECR plasma (or without ECR plasma) assisted MOCVD. Sr(TMHD)2 and Ti-isopropoxide were used as Sr and Ti metal organic sources, respectively. Perovskite SrTiO3 films were obtained at relatively low temperature of 500°C using ECR oxygen plasma. Experimental results indicated that higher deposition temperature and ECR oxygen plasma increase the crystallinity, the dielectric constant and the leakage current density. The dielectric constant and the dielectric loss were 222 and 0.04, respectively, for 1234 angstrom thin SrTiO3 film (Sr/(Sr+Ti)=0.5). The leakage current density was 3.78 × 10-7 A/cm2 at 1.0V, and the dielectric breakdown field was 0.57MV/cm. SEM analyses showed that SrTiO3 films have a uniform and fine grain structure. In terms of step coverage, a lateral step coverage of 50{\%} at 0.8μm step (the aspect ratio was 1) was obtained with the thickness uniformity of ±0.5{\%} and the composition uniformity of ±1.2{\%} at 4″ wafer.",
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