Preparation and properties of PGO thin films by PLD

Sang Mo Koo, Li Rong Zheng, Qing Rui Yin, Byung-Moo Moon, K. V. Rao

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Lead germanate, Pb 5Ge 3O 11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O 2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO 3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

Original languageEnglish
Title of host publicationFerroelectrics
Pages245-252
Number of pages8
Volume225
Edition1-4
Publication statusPublished - 1999

Fingerprint

Pulsed laser deposition
Thin films
preparation
Substrates
thin films
Oxygen
oxygen
Oxidants
Temperature
Ferroelectric materials
temperature
Permittivity
Lead
Annealing
permittivity
annealing
1-dodecylpyridoxal

Keywords

  • Laser ablation
  • Pb Ge O (PGO)
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Koo, S. M., Zheng, L. R., Yin, Q. R., Moon, B-M., & Rao, K. V. (1999). Preparation and properties of PGO thin films by PLD. In Ferroelectrics (1-4 ed., Vol. 225, pp. 245-252)

Preparation and properties of PGO thin films by PLD. / Koo, Sang Mo; Zheng, Li Rong; Yin, Qing Rui; Moon, Byung-Moo; Rao, K. V.

Ferroelectrics. Vol. 225 1-4. ed. 1999. p. 245-252.

Research output: Chapter in Book/Report/Conference proceedingChapter

Koo, SM, Zheng, LR, Yin, QR, Moon, B-M & Rao, KV 1999, Preparation and properties of PGO thin films by PLD. in Ferroelectrics. 1-4 edn, vol. 225, pp. 245-252.
Koo SM, Zheng LR, Yin QR, Moon B-M, Rao KV. Preparation and properties of PGO thin films by PLD. In Ferroelectrics. 1-4 ed. Vol. 225. 1999. p. 245-252
Koo, Sang Mo ; Zheng, Li Rong ; Yin, Qing Rui ; Moon, Byung-Moo ; Rao, K. V. / Preparation and properties of PGO thin films by PLD. Ferroelectrics. Vol. 225 1-4. ed. 1999. pp. 245-252
@inbook{9136b7f395a1456d9e68f7f8e69c919f,
title = "Preparation and properties of PGO thin films by PLD",
abstract = "Lead germanate, Pb 5Ge 3O 11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O 2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO 3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.",
keywords = "Laser ablation, Pb Ge O (PGO), Thin film",
author = "Koo, {Sang Mo} and Zheng, {Li Rong} and Yin, {Qing Rui} and Byung-Moo Moon and Rao, {K. V.}",
year = "1999",
language = "English",
volume = "225",
pages = "245--252",
booktitle = "Ferroelectrics",
edition = "1-4",

}

TY - CHAP

T1 - Preparation and properties of PGO thin films by PLD

AU - Koo, Sang Mo

AU - Zheng, Li Rong

AU - Yin, Qing Rui

AU - Moon, Byung-Moo

AU - Rao, K. V.

PY - 1999

Y1 - 1999

N2 - Lead germanate, Pb 5Ge 3O 11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O 2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO 3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

AB - Lead germanate, Pb 5Ge 3O 11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O 2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO 3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

KW - Laser ablation

KW - Pb Ge O (PGO)

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=6244226108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6244226108&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:6244226108

VL - 225

SP - 245

EP - 252

BT - Ferroelectrics

ER -