Preparation and properties of PGO thin films by PLD

Sang Mo Koo, Li Rong Zheng, Qing Rui Yin, Byung Moo Moon, K. V. Rao

Research output: Contribution to journalArticle

Abstract

Lead germanate, Pb5Ge3O11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650°C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400°C for 30min to keep good YBCO layers.

Original languageEnglish
Pages (from-to)245-252
Number of pages8
JournalFerroelectrics
Volume225
Issue number1-4
DOIs
Publication statusPublished - 1999 Jan 1

Keywords

  • Laser ablation
  • PbGeO (PGO)
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Koo, S. M., Zheng, L. R., Yin, Q. R., Moon, B. M., & Rao, K. V. (1999). Preparation and properties of PGO thin films by PLD. Ferroelectrics, 225(1-4), 245-252. https://doi.org/10.1080/00150199908009132