Preparation of Cu2ZnSnS4 thin films via electrochemical deposition and rapid thermal annealing

Kee Doo Lee, Se Won Seo, Doh Kwon Lee, Honggon Kim, Jeung Hyun Jeong, Min Jae Ko, Bong Soo Kim, Dong Hwan Kim, Jin Young Kim

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


We fabricated metallic Cu-Zn-Sn (CZT) precursor thin films via electrochemical deposition fromaqueous metal salt solution on Mo-coated soda-lime glass substrates, and the influence of the subsequent sulfurization condition on the morphology, compositionand structure of the final Cu 2ZnSnS4 (CZTS) thin films was investigated. A rapid thermal annealing equipment was used for a systematic control of the sulfurization process parameters. The as-deposited films are composed of binary metallic alloys, which can be converted to the highly crystalline CZTS phase after sulfurization at temperatures above 500 °C. The composition of the CZT film barely changes during the sulfurization, and a small amount of CuS-based secondary phases exists evenat 550 °C. However, a quick post-annealing KCN treatment effectively and selectively removes the secondary phase, evidenced by the Raman spectroscopy and elemental.

Original languageEnglish
Pages (from-to)294-298
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2013 Nov 1


  • Electrochemical deposition
  • RTA
  • Sulfurization
  • Thin film solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Preparation of Cu2ZnSnS4 thin films via electrochemical deposition and rapid thermal annealing'. Together they form a unique fingerprint.

Cite this