Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors

Seung Hyun Chae, Hyojeong Kim, Jun Yeol Kim, Sung Jin Kim, Youngmee Kim, Suk Joong Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.

Original languageEnglish
Pages (from-to)20-24
Number of pages5
JournalSynthetic Metals
Volume220
DOIs
Publication statusPublished - 2016 Oct 1

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Keywords

  • Field-effect transistor
  • Porphyrin
  • Semiconductor
  • Thin film
  • π-π interaction

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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