Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors

Seung Hyun Chae, Hyojeong Kim, Jun Yeol Kim, Sung Jin Kim, Youngmee Kim, Suk Joong Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.

Original languageEnglish
Pages (from-to)20-24
Number of pages5
JournalSynthetic Metals
Volume220
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Organic field effect transistors
Porphyrins
porphyrins
field effect transistors
Single crystals
Derivatives
preparation
single crystals
Carrier mobility
carrier mobility
crystallinity
Crystalline materials
Fabrication
Thin films
fabrication
synthesis
thin films

Keywords

  • Field-effect transistor
  • Porphyrin
  • Semiconductor
  • Thin film
  • π-π interaction

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors. / Chae, Seung Hyun; Kim, Hyojeong; Kim, Jun Yeol; Kim, Sung Jin; Kim, Youngmee; Lee, Suk Joong.

In: Synthetic Metals, Vol. 220, 01.10.2016, p. 20-24.

Research output: Contribution to journalArticle

Chae, Seung Hyun ; Kim, Hyojeong ; Kim, Jun Yeol ; Kim, Sung Jin ; Kim, Youngmee ; Lee, Suk Joong. / Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors. In: Synthetic Metals. 2016 ; Vol. 220. pp. 20-24.
@article{d8f8f9f115504c71b6ba590beac7bdcc,
title = "Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors",
abstract = "The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.",
keywords = "Field-effect transistor, Porphyrin, Semiconductor, Thin film, π-π interaction",
author = "Chae, {Seung Hyun} and Hyojeong Kim and Kim, {Jun Yeol} and Kim, {Sung Jin} and Youngmee Kim and Lee, {Suk Joong}",
year = "2016",
month = "10",
day = "1",
doi = "10.1016/j.synthmet.2016.05.021",
language = "English",
volume = "220",
pages = "20--24",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors

AU - Chae, Seung Hyun

AU - Kim, Hyojeong

AU - Kim, Jun Yeol

AU - Kim, Sung Jin

AU - Kim, Youngmee

AU - Lee, Suk Joong

PY - 2016/10/1

Y1 - 2016/10/1

N2 - The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.

AB - The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.

KW - Field-effect transistor

KW - Porphyrin

KW - Semiconductor

KW - Thin film

KW - π-π interaction

UR - http://www.scopus.com/inward/record.url?scp=84971492439&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971492439&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2016.05.021

DO - 10.1016/j.synthmet.2016.05.021

M3 - Article

AN - SCOPUS:84971492439

VL - 220

SP - 20

EP - 24

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

ER -