Preparation of Pb(Zr0.35Ti0.65)O3 films on conducting oxide ga-doped zno films for transparent ferroelectric thin-film transistors

Kwang Bae Lee, Kyung Haeng Lee, Byeung Kwon Ju

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1 Citation (Scopus)


We have investigated the feasibility of the deposition of ferroelectric PZT films on transparent conducting Ga-doped ZnO (GZO) films, for transparent ferroelectric thin-film transistors. Low resistive and high c-axis oriented GZO films are prepared at the substrate temperature of 250°C using the dc magnetron sputtering method. PZT films are deposited at low substrate temperature and subsequently crystallized by means of the rapid annealing process in a high vacuum to minimize the reaction of PZT with GZO films. Various vacuum-annealing conditions are investigated to get high-quality PZT films, which show single perovskite phase with a random orientation. The optimized PZT/GZO capacitors have somewhat unsaturated P-E hysteresis loops with the values of remanent polarization and coercive field of about 4.5 μC/cm 2 and 145 kV/cm, respectively.

Original languageEnglish
Pages (from-to)159-168
Number of pages10
JournalIntegrated Ferroelectrics
Issue number1
Publication statusPublished - 2006


  • Ferroelectric PZT films
  • Transparent TFTs
  • Transparent conducting Ga-doped ZnO (GZO)
  • Vacuum-annealing process

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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