Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate

Tae Yun Kwon, Jae Hong Park, Yong Bum Kim, Dae Sung Yoon, Chae Il Cheon, Hong Lim Lee, Tae Song Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 °C), was 703.5 and 911.3, respectively.

Original languageEnglish
Pages (from-to)172-178
Number of pages7
JournalJournal of Crystal Growth
Volume295
Issue number2
DOIs
Publication statusPublished - 2006 Oct 1
Externally publishedYes

    Fingerprint

Keywords

  • A3. Polycrystalline deposition
  • B1. Perovskites
  • B2. Dielectric materials
  • B2. Piezoelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this