Present status and future directions of SiGe HBT technology

Marwan H. Khater, Thomas N. Adam, Rajendran Krishnasamy, Mattias E. Dahlstrom, Jae-Sung Rieh, Kathryn T. Schonenberg, Bradly A. Orner, Francois Pagette, Kenneth Stein, David C. Ahlgren

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovations required to improve SiGe HBTs performance have benefited from advanced materials and process techniques developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs approaching 400 GHz. In addition, we present device simulation results that show the extendibility of SiGe HBT technology performance towards half-terahertz and beyond with further scaling and device structure improvements.

Original languageEnglish
Pages (from-to)61-80
Number of pages20
JournalInternational Journal of High Speed Electronics and Systems
Volume17
Issue number1
DOIs
Publication statusPublished - 2007 Mar 1

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Keywords

  • Lateral scaling
  • Raised extrinsic base
  • Self-aligned structure
  • SiGe HBTs
  • Vertical scaling

ASJC Scopus subject areas

  • Media Technology
  • Electrical and Electronic Engineering

Cite this

Khater, M. H., Adam, T. N., Krishnasamy, R., Dahlstrom, M. E., Rieh, J-S., Schonenberg, K. T., ... Ahlgren, D. C. (2007). Present status and future directions of SiGe HBT technology. International Journal of High Speed Electronics and Systems, 17(1), 61-80. https://doi.org/10.1142/S0129156407004254

Present status and future directions of SiGe HBT technology. / Khater, Marwan H.; Adam, Thomas N.; Krishnasamy, Rajendran; Dahlstrom, Mattias E.; Rieh, Jae-Sung; Schonenberg, Kathryn T.; Orner, Bradly A.; Pagette, Francois; Stein, Kenneth; Ahlgren, David C.

In: International Journal of High Speed Electronics and Systems, Vol. 17, No. 1, 01.03.2007, p. 61-80.

Research output: Contribution to journalArticle

Khater, MH, Adam, TN, Krishnasamy, R, Dahlstrom, ME, Rieh, J-S, Schonenberg, KT, Orner, BA, Pagette, F, Stein, K & Ahlgren, DC 2007, 'Present status and future directions of SiGe HBT technology', International Journal of High Speed Electronics and Systems, vol. 17, no. 1, pp. 61-80. https://doi.org/10.1142/S0129156407004254
Khater, Marwan H. ; Adam, Thomas N. ; Krishnasamy, Rajendran ; Dahlstrom, Mattias E. ; Rieh, Jae-Sung ; Schonenberg, Kathryn T. ; Orner, Bradly A. ; Pagette, Francois ; Stein, Kenneth ; Ahlgren, David C. / Present status and future directions of SiGe HBT technology. In: International Journal of High Speed Electronics and Systems. 2007 ; Vol. 17, No. 1. pp. 61-80.
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