Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate

Dae sik Kim, Woo Seop Jeong, Hyungduk Ko, Jae Sang Lee, Dong Jin Byun

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) process of gallium nitride (GaN) films on cone-shaped patterned sapphire substrate (PSS), which was pretreated by ion-implantation was performed by using a metal organic chemical vapor deposition. A 250-nm-thick silicon dioxide (SiO2) mask was covered on the planar surface of the PSS to protect them from ion-implantation damages, whereas the cone-shaped patterns of the PSS were exposed to collide with the N+ ions. The ion-implantation pretreatment was selectively carried out on the cone-shaped pattern of PSS at 67.5keV with a high dose of 5×1017 cm-2. As a result of ion-implantation pretreatment, nucleation growth of GaN poly-grains was inhibited on the cone-shaped patterns with various crystal planes, such as c-like plane, R-like plane, and n-like plane. Surface roughness and crystal quality of GaN films grown on ion-implanted PSS were improved owing to the inhibition of nucleation growth on the patterns. The ion-implantation pretreatment is a very promising technique in the ELO process of GaN on an uneven substrate such as a cone-shaped PSS that includes various crystal planes.

Original languageEnglish
JournalThin Solid Films
DOIs
Publication statusAccepted/In press - 2017

Keywords

  • Epitaxial lateral overgrowth
  • Gallium nitride
  • Ion-implantation
  • Metal organic chemical vapor deposition
  • Patterned sapphire substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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