Prismatic punching defects in CdTe compounds

K. H. Kim; A. E. Bolotnikov; G. S. Camarda; J. Franc; P. Fochuk; R. B. James

doi:10.1016/j.jcrysgro.2013.12.015

Prismatic punching defects in CdTe compounds

K. H. Kim, A. E. Bolotnikov, G. S. Camarda, J. Franc, P. Fochuk, R. B. James

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Crystal Growth
Volume	390
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.12.015
Publication status	Published - 2014 Mar 15

Keywords

A1. Defects
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2013.12.015

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title = "Prismatic punching defects in CdTe compounds",

abstract = "The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix.",

keywords = "A1. Defects, A2. Bridgman technique, B1. Cadmium compounds, B2. Semiconducting II-VI materials",

author = "Kim, {K. H.} and Bolotnikov, {A. E.} and Camarda, {G. S.} and J. Franc and P. Fochuk and James, {R. B.}",

note = "Funding Information: This work was supported by Korea University (Grant no. K1222241 ) and the Office of Defense Nonproliferation Research and Development of U.S. Department of Energy, DNN R&D.",

year = "2014",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2013.12.015",

language = "English",

volume = "390",

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T1 - Prismatic punching defects in CdTe compounds

AU - Kim, K. H.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Franc, J.

AU - Fochuk, P.

AU - James, R. B.

N1 - Funding Information: This work was supported by Korea University (Grant no. K1222241 ) and the Office of Defense Nonproliferation Research and Development of U.S. Department of Energy, DNN R&D.

PY - 2014/3/15

Y1 - 2014/3/15

N2 - The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix.

AB - The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix.

KW - A1. Defects

KW - A2. Bridgman technique

KW - B1. Cadmium compounds

KW - B2. Semiconducting II-VI materials

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DO - 10.1016/j.jcrysgro.2013.12.015

M3 - Article

AN - SCOPUS:84891723347

SN - 0022-0248

VL - 390

SP - 1

EP - 4

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Prismatic punching defects in CdTe compounds

Abstract

Keywords

ASJC Scopus subject areas

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