Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Byung Chul Lee, Junhong Na, Jun Hee Choi, Hyunjin Ji, Gyu-Tae Kim, Min Kyu Joo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas–Fermi charge screening (λTF) and interlayer resistance (Rint). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2.

Original languageEnglish
Article number1805860
JournalAdvanced Materials
DOIs
Publication statusAccepted/In press - 2018 Jan 1

Fingerprint

Rhenium
Disulfides
Multilayers
Electrons
Carrier transport
Relocation
Electrostatic force
Transconductance
Charge carriers
Resistors
Transition metals
Charge transfer
Screening
Spectroscopy

Keywords

  • anisotropy transport
  • charge conduction mechanism
  • Coulomb screening
  • multilayer
  • rhenium disulfide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide. / Lee, Byung Chul; Na, Junhong; Choi, Jun Hee; Ji, Hyunjin; Kim, Gyu-Tae; Joo, Min Kyu.

In: Advanced Materials, 01.01.2018.

Research output: Contribution to journalArticle

Lee, Byung Chul ; Na, Junhong ; Choi, Jun Hee ; Ji, Hyunjin ; Kim, Gyu-Tae ; Joo, Min Kyu. / Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide. In: Advanced Materials. 2018.
@article{1ebba1bf1252459da4841752182b4f85,
title = "Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide",
abstract = "Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas–Fermi charge screening (λTF) and interlayer resistance (Rint). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2.",
keywords = "anisotropy transport, charge conduction mechanism, Coulomb screening, multilayer, rhenium disulfide",
author = "Lee, {Byung Chul} and Junhong Na and Choi, {Jun Hee} and Hyunjin Ji and Gyu-Tae Kim and Joo, {Min Kyu}",
year = "2018",
month = "1",
day = "1",
doi = "10.1002/adma.201805860",
language = "English",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

AU - Lee, Byung Chul

AU - Na, Junhong

AU - Choi, Jun Hee

AU - Ji, Hyunjin

AU - Kim, Gyu-Tae

AU - Joo, Min Kyu

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas–Fermi charge screening (λTF) and interlayer resistance (Rint). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2.

AB - Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas–Fermi charge screening (λTF) and interlayer resistance (Rint). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2.

KW - anisotropy transport

KW - charge conduction mechanism

KW - Coulomb screening

KW - multilayer

KW - rhenium disulfide

UR - http://www.scopus.com/inward/record.url?scp=85058407796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058407796&partnerID=8YFLogxK

U2 - 10.1002/adma.201805860

DO - 10.1002/adma.201805860

M3 - Article

C2 - 30549104

AN - SCOPUS:85058407796

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

M1 - 1805860

ER -