Proceedings of the 1995 E-MRS Spring Meeting

E. Schroer, S. Hopfe, Joo Youl Huh, U. Goesele

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

Original languageEnglish
Title of host publicationMaterials science & engineering. B, Solid-state materials for advanced technology
PublisherElsevier Science S.A.
VolumeB36
Edition1-3
Publication statusPublished - 1996 Jan
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Schroer, E., Hopfe, S., Huh, J. Y., & Goesele, U. (1996). Proceedings of the 1995 E-MRS Spring Meeting. In Materials science & engineering. B, Solid-state materials for advanced technology (1-3 ed., Vol. B36). Elsevier Science S.A..