Proceedings of the 1995 E-MRS Spring Meeting

E. Schroer, S. Hopfe, J. Y. Huh, U. Goesele

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

Original languageEnglish
Title of host publicationSymposium N
Subtitle of host publicationCarbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors
PublisherElsevier Science S.A.
Pages[d]294p
Edition1-3
Publication statusPublished - 1996 Jan
Externally publishedYes

Publication series

NameMaterials science & engineering. B, Solid-state materials for advanced technology
Number1-3
VolumeB36
ISSN (Print)0921-5107

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Schroer, E., Hopfe, S., Huh, J. Y., & Goesele, U. (1996). Proceedings of the 1995 E-MRS Spring Meeting. In Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors (1-3 ed., pp. [d]294p). (Materials science & engineering. B, Solid-state materials for advanced technology; Vol. B36, No. 1-3). Elsevier Science S.A..