Process optimization approached by design of experiment method for Ga-doped ZnO thin films

Deuk Hee Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

Abstract

Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8'10-4Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.

Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalTransactions of the Korean Institute of Electrical Engineers
Volume59
Issue number1
Publication statusPublished - 2010 Jan 1

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Design of experiments
Thin films
Oxygen
Substrates
Pulsed laser deposition
Partial pressure
Transparency
Electric properties
Glass
Electrodes
Composite materials

Keywords

  • DOE
  • Ga-doped
  • PLD
  • TCO
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Process optimization approached by design of experiment method for Ga-doped ZnO thin films. / Lee, Deuk Hee; Kim, Sangsig; Lee, Sang Yeol.

In: Transactions of the Korean Institute of Electrical Engineers, Vol. 59, No. 1, 01.01.2010, p. 108-112.

Research output: Contribution to journalArticle

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