Process optimization approached by design of experiment method for Ga-doped ZnO thin films

Deuk Hee Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle


Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8'10-4Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.

Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalTransactions of the Korean Institute of Electrical Engineers
Issue number1
Publication statusPublished - 2010 Jan 1



  • DOE
  • Ga-doped
  • PLD
  • TCO
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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