Process-property relationship in high-: K ALD SrTiO3 and BaTiO3: A review

Joon Hyung Shim, H. J. Choi, Y. Kim, J. Torgersen, J. An, M. H. Lee, F. B. Prinz

Research output: Contribution to journalReview article

17 Citations (Scopus)

Abstract

Perovskites exhibit a wide range of remarkable material properties that have the potential to advance various scientific fields. These properties originate in their unique structure and composition. To leverage these properties in the ultrathin film regime, atomic-level control of thickness, composition, and crystal structure will be essential for creating next-generation perovskite devices. Atomic layer deposition (ALD) has the potential to enable these design prospects. However, its future use in the field will be dependent on the quality of the link between ALD process parameters and the perovskite phase. In this overview, we present work on barium and strontium titanate (BTO and STO) ultrathin films for high-k applications. We present ALD process strategies developed and optimized to achieve both desired composition and phase, yielding high dielectric constants and low leakage currents at the same time. We discuss thermal annealing, plasma treatment, and the use of seed layers and specialized precursors to improve the properties of BTO and STO by different enhancement mechanisms. In the ultrathin film regime, the understanding of macroscopic material properties will be dependent on the knowledge of the atomic scale arrangement. In conjunction with advances in manufacturing, we therefore also discuss novel strategies and techniques for characterization that will likely be significant in establishing a valid and reliable ALD process parameter-thin film dielectric property relationship.

Original languageEnglish
Pages (from-to)8000-8013
Number of pages14
JournalJournal of Materials Chemistry C
Volume5
Issue number32
DOIs
Publication statusPublished - 2017

Fingerprint

Atomic layer deposition
Ultrathin films
Perovskite
Materials properties
Chemical analysis
Level control
Barium
Strontium
Leakage currents
Dielectric properties
Seed
Permittivity
Crystal structure
Annealing
Plasmas
Thin films
strontium titanium oxide
perovskite

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Shim, J. H., Choi, H. J., Kim, Y., Torgersen, J., An, J., Lee, M. H., & Prinz, F. B. (2017). Process-property relationship in high-: K ALD SrTiO3 and BaTiO3: A review. Journal of Materials Chemistry C, 5(32), 8000-8013. https://doi.org/10.1039/c6tc05158h

Process-property relationship in high- : K ALD SrTiO3 and BaTiO3: A review. / Shim, Joon Hyung; Choi, H. J.; Kim, Y.; Torgersen, J.; An, J.; Lee, M. H.; Prinz, F. B.

In: Journal of Materials Chemistry C, Vol. 5, No. 32, 2017, p. 8000-8013.

Research output: Contribution to journalReview article

Shim, JH, Choi, HJ, Kim, Y, Torgersen, J, An, J, Lee, MH & Prinz, FB 2017, 'Process-property relationship in high-: K ALD SrTiO3 and BaTiO3: A review', Journal of Materials Chemistry C, vol. 5, no. 32, pp. 8000-8013. https://doi.org/10.1039/c6tc05158h
Shim, Joon Hyung ; Choi, H. J. ; Kim, Y. ; Torgersen, J. ; An, J. ; Lee, M. H. ; Prinz, F. B. / Process-property relationship in high- : K ALD SrTiO3 and BaTiO3: A review. In: Journal of Materials Chemistry C. 2017 ; Vol. 5, No. 32. pp. 8000-8013.
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