Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

D. C. Ahlgren, B. Jagannathan, S. J. Jeng, P. Smith, D. Angell, H. Chen, M. Khater, F. Pagette, Jae-Sung Rieh, K. Schonenberg, A. Stricker, G. Freeman, A. Joseph, K. Stein, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.

Original languageEnglish
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages80-83
Number of pages4
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 2002 Sep 292002 Oct 1

Other

Other2002 IEEE Biopolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period02/9/2902/10/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Ahlgren, D. C., Jagannathan, B., Jeng, S. J., Smith, P., Angell, D., Chen, H., Khater, M., Pagette, F., Rieh, J-S., Schonenberg, K., Stricker, A., Freeman, G., Joseph, A., Stein, K., & Subbanna, S. (2002). Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 80-83)