Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

D. C. Ahlgren, B. Jagannathan, S. J. Jeng, P. Smith, D. Angell, H. Chen, M. Khater, F. Pagette, Jae-Sung Rieh, K. Schonenberg, A. Stricker, G. Freeman, A. Joseph, K. Stein, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.

Original languageEnglish
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages80-83
Number of pages4
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 2002 Sep 292002 Oct 1

Other

Other2002 IEEE Biopolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period02/9/2902/10/1

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Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ahlgren, D. C., Jagannathan, B., Jeng, S. J., Smith, P., Angell, D., Chen, H., ... Subbanna, S. (2002). Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 80-83)

Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. / Ahlgren, D. C.; Jagannathan, B.; Jeng, S. J.; Smith, P.; Angell, D.; Chen, H.; Khater, M.; Pagette, F.; Rieh, Jae-Sung; Schonenberg, K.; Stricker, A.; Freeman, G.; Joseph, A.; Stein, K.; Subbanna, S.

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2002. p. 80-83.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahlgren, DC, Jagannathan, B, Jeng, SJ, Smith, P, Angell, D, Chen, H, Khater, M, Pagette, F, Rieh, J-S, Schonenberg, K, Stricker, A, Freeman, G, Joseph, A, Stein, K & Subbanna, S 2002, Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. in Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. pp. 80-83, 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States, 02/9/29.
Ahlgren DC, Jagannathan B, Jeng SJ, Smith P, Angell D, Chen H et al. Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2002. p. 80-83
Ahlgren, D. C. ; Jagannathan, B. ; Jeng, S. J. ; Smith, P. ; Angell, D. ; Chen, H. ; Khater, M. ; Pagette, F. ; Rieh, Jae-Sung ; Schonenberg, K. ; Stricker, A. ; Freeman, G. ; Joseph, A. ; Stein, K. ; Subbanna, S. / Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2002. pp. 80-83
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