Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

D. C. Ahlgren, B. Jagannathan, S. J. Jeng, P. Smith, D. Angell, H. Chen, M. Khater, F. Pagette, J. S. Rieh, K. Schonenberg, A. Stricker, G. Freeman, A. Joseph, K. Stein, S. Subbanna

Research output: Contribution to conferencePaperpeer-review

10 Citations (Scopus)

Abstract

The process variability analysis of a Si/SiGe heterojunction bipolar transistor (HBT) with greater than 200 GHz performance was discussed. The robustness of the device was demonstrated over a wide range of deliberate process induced variations. The analysis showed that AC and DC device results on 200 mm wafers demonstrated a wide process window resulting in a highly manufacturable HBT technology.

Original languageEnglish
Pages80-83
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 2002 Sep 292002 Oct 1

Other

Other2002 IEEE Biopolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period02/9/2902/10/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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