Processing technique for single-walled carbon nanotube-based sensor arrays

Kyeong Heon Kim, Chi Woong Jang, Tae Geun Kim, Seok Lee, Sun Ho Kim, Young Tae Byun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.

Original languageEnglish
Pages (from-to)1251-1255
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number2
DOIs
Publication statusPublished - 2012 Jun 5

Fingerprint

Carbon Nanotubes
Sensor arrays
Single-walled carbon nanotubes (SWCN)
Photoresists
carbon nanotubes
photoresists
Field emission
field emission
Transistors
transistors
sensors
Processing
Substrates
Acetone
Silicon Dioxide
Self assembly
acetone
self assembly
Electrodes
assembly

Keywords

  • FET arrays
  • Photolithography
  • SAM
  • Sensor
  • SWCNT

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Processing technique for single-walled carbon nanotube-based sensor arrays. / Kim, Kyeong Heon; Jang, Chi Woong; Kim, Tae Geun; Lee, Seok; Kim, Sun Ho; Byun, Young Tae.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 2, 05.06.2012, p. 1251-1255.

Research output: Contribution to journalArticle

Kim, Kyeong Heon ; Jang, Chi Woong ; Kim, Tae Geun ; Lee, Seok ; Kim, Sun Ho ; Byun, Young Tae. / Processing technique for single-walled carbon nanotube-based sensor arrays. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 2. pp. 1251-1255.
@article{5fa5f0a0e8904784afd9f4fd66f6d51d,
title = "Processing technique for single-walled carbon nanotube-based sensor arrays",
abstract = "We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.",
keywords = "FET arrays, Photolithography, SAM, Sensor, SWCNT",
author = "Kim, {Kyeong Heon} and Jang, {Chi Woong} and Kim, {Tae Geun} and Seok Lee and Kim, {Sun Ho} and Byun, {Young Tae}",
year = "2012",
month = "6",
day = "5",
doi = "10.1166/jnn.2012.4661",
language = "English",
volume = "12",
pages = "1251--1255",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "2",

}

TY - JOUR

T1 - Processing technique for single-walled carbon nanotube-based sensor arrays

AU - Kim, Kyeong Heon

AU - Jang, Chi Woong

AU - Kim, Tae Geun

AU - Lee, Seok

AU - Kim, Sun Ho

AU - Byun, Young Tae

PY - 2012/6/5

Y1 - 2012/6/5

N2 - We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.

AB - We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO 2) surface by using only a photolithographic process; then, we fabricated 8×8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO 2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using acetone. As a result, selectively-assembled SWCNT channels in 8×8 FET arrays could be fabricated between source and drain electrodes without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated 8×8 SWCNT-based multi-channel FET arrays by using our novel self-assembly method.

KW - FET arrays

KW - Photolithography

KW - SAM

KW - Sensor

KW - SWCNT

UR - http://www.scopus.com/inward/record.url?scp=84861661709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861661709&partnerID=8YFLogxK

U2 - 10.1166/jnn.2012.4661

DO - 10.1166/jnn.2012.4661

M3 - Article

C2 - 22629932

AN - SCOPUS:84861661709

VL - 12

SP - 1251

EP - 1255

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 2

ER -