Product Applications and Technology Directions with SiGe BiCMOS

Alvin J. Joseph, James Dunn, Greg Freeman, David L. Harame, Dough Coolbaugh, Rob Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

Original languageEnglish
Pages (from-to)1471-1478
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume38
Issue number9
DOIs
Publication statusPublished - 2003 Sep
Externally publishedYes

Keywords

  • BiCMOS
  • Multiplexer (MUX)
  • Power amplifier
  • SiGe HBT
  • Voltage-controlled oscillator (VCO)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Joseph, A. J., Dunn, J., Freeman, G., Harame, D. L., Coolbaugh, D., Groves, R., Stein, K. J., Volant, R., Subbanna, S., Marangos, V. S., St. Onge, S., Eshun, E., Cooper, P., Johnson, J. B., Rieh, J. S., Jagannathan, B., Ramachandran, V., Ahlgren, D., Wang, D., & Wang, X. (2003). Product Applications and Technology Directions with SiGe BiCMOS. IEEE Journal of Solid-State Circuits, 38(9), 1471-1478. https://doi.org/10.1109/JSSC.2003.815930