Product Applications and Technology Directions with SiGe BiCMOS

Alvin J. Joseph, James Dunn, Greg Freeman, David L. Harame, Dough Coolbaugh, Rob Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

Original languageEnglish
Pages (from-to)1471-1478
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume38
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
BiCMOS technology
Variable frequency oscillators
Foundries
Power amplifiers
Energy gap
Communication
Costs

Keywords

  • BiCMOS
  • Multiplexer (MUX)
  • Power amplifier
  • SiGe HBT
  • Voltage-controlled oscillator (VCO)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Joseph, A. J., Dunn, J., Freeman, G., Harame, D. L., Coolbaugh, D., Groves, R., ... Wang, X. (2003). Product Applications and Technology Directions with SiGe BiCMOS. IEEE Journal of Solid-State Circuits, 38(9), 1471-1478. https://doi.org/10.1109/JSSC.2003.815930

Product Applications and Technology Directions with SiGe BiCMOS. / Joseph, Alvin J.; Dunn, James; Freeman, Greg; Harame, David L.; Coolbaugh, Dough; Groves, Rob; Stein, Kenneth J.; Volant, Rich; Subbanna, Seshadri; Marangos, V. S.; St. Onge, Stephen; Eshun, Ebenezer; Cooper, P.; Johnson, Jeffrey B.; Rieh, Jae-Sung; Jagannathan, Basanth; Ramachandran, Vidhya; Ahlgren, David; Wang, Dawn; Wang, X.

In: IEEE Journal of Solid-State Circuits, Vol. 38, No. 9, 01.09.2003, p. 1471-1478.

Research output: Contribution to journalArticle

Joseph, AJ, Dunn, J, Freeman, G, Harame, DL, Coolbaugh, D, Groves, R, Stein, KJ, Volant, R, Subbanna, S, Marangos, VS, St. Onge, S, Eshun, E, Cooper, P, Johnson, JB, Rieh, J-S, Jagannathan, B, Ramachandran, V, Ahlgren, D, Wang, D & Wang, X 2003, 'Product Applications and Technology Directions with SiGe BiCMOS', IEEE Journal of Solid-State Circuits, vol. 38, no. 9, pp. 1471-1478. https://doi.org/10.1109/JSSC.2003.815930
Joseph AJ, Dunn J, Freeman G, Harame DL, Coolbaugh D, Groves R et al. Product Applications and Technology Directions with SiGe BiCMOS. IEEE Journal of Solid-State Circuits. 2003 Sep 1;38(9):1471-1478. https://doi.org/10.1109/JSSC.2003.815930
Joseph, Alvin J. ; Dunn, James ; Freeman, Greg ; Harame, David L. ; Coolbaugh, Dough ; Groves, Rob ; Stein, Kenneth J. ; Volant, Rich ; Subbanna, Seshadri ; Marangos, V. S. ; St. Onge, Stephen ; Eshun, Ebenezer ; Cooper, P. ; Johnson, Jeffrey B. ; Rieh, Jae-Sung ; Jagannathan, Basanth ; Ramachandran, Vidhya ; Ahlgren, David ; Wang, Dawn ; Wang, X. / Product Applications and Technology Directions with SiGe BiCMOS. In: IEEE Journal of Solid-State Circuits. 2003 ; Vol. 38, No. 9. pp. 1471-1478.
@article{2699bb47c2714b11bd5319222b35f13e,
title = "Product Applications and Technology Directions with SiGe BiCMOS",
abstract = "In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.",
keywords = "BiCMOS, Multiplexer (MUX), Power amplifier, SiGe HBT, Voltage-controlled oscillator (VCO)",
author = "Joseph, {Alvin J.} and James Dunn and Greg Freeman and Harame, {David L.} and Dough Coolbaugh and Rob Groves and Stein, {Kenneth J.} and Rich Volant and Seshadri Subbanna and Marangos, {V. S.} and {St. Onge}, Stephen and Ebenezer Eshun and P. Cooper and Johnson, {Jeffrey B.} and Jae-Sung Rieh and Basanth Jagannathan and Vidhya Ramachandran and David Ahlgren and Dawn Wang and X. Wang",
year = "2003",
month = "9",
day = "1",
doi = "10.1109/JSSC.2003.815930",
language = "English",
volume = "38",
pages = "1471--1478",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Product Applications and Technology Directions with SiGe BiCMOS

AU - Joseph, Alvin J.

AU - Dunn, James

AU - Freeman, Greg

AU - Harame, David L.

AU - Coolbaugh, Dough

AU - Groves, Rob

AU - Stein, Kenneth J.

AU - Volant, Rich

AU - Subbanna, Seshadri

AU - Marangos, V. S.

AU - St. Onge, Stephen

AU - Eshun, Ebenezer

AU - Cooper, P.

AU - Johnson, Jeffrey B.

AU - Rieh, Jae-Sung

AU - Jagannathan, Basanth

AU - Ramachandran, Vidhya

AU - Ahlgren, David

AU - Wang, Dawn

AU - Wang, X.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

AB - In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the work-horse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.

KW - BiCMOS

KW - Multiplexer (MUX)

KW - Power amplifier

KW - SiGe HBT

KW - Voltage-controlled oscillator (VCO)

UR - http://www.scopus.com/inward/record.url?scp=0041779674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041779674&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2003.815930

DO - 10.1109/JSSC.2003.815930

M3 - Article

AN - SCOPUS:0041779674

VL - 38

SP - 1471

EP - 1478

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 9

ER -