Product applications and technology directions with SiGe BiCMOS

J. Dunn, G. Freeman, D. Harame, A. Joseph, D. Coolbaugh, R. Groves, K. Stein, R. Volant, S. Subbanna, V. S. Marangos, S. St. Onge, E. Eshun, P. Cooper, J. Johnson, Jae-Sung Rieh, V. Ramachandran, D. Ahlgren, D. Wang, X. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications were discussed. The key component of the device was the SiGe-base HBT whose performance was improved to over 200 GHz in the 0.13 μm generation. The advantage of the technology over other platforms includes the ability to integrate different functions on a single chip.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Pages135-138
Number of pages4
Publication statusPublished - 2002 Jan 1
Externally publishedYes
EventProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
Duration: 2002 Oct 202002 Oct 23

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CountryUnited States
CityMonterey, CA
Period02/10/2002/10/23

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Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dunn, J., Freeman, G., Harame, D., Joseph, A., Coolbaugh, D., Groves, R., ... Wang, X. (2002). Product applications and technology directions with SiGe BiCMOS. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 135-138)

Product applications and technology directions with SiGe BiCMOS. / Dunn, J.; Freeman, G.; Harame, D.; Joseph, A.; Coolbaugh, D.; Groves, R.; Stein, K.; Volant, R.; Subbanna, S.; Marangos, V. S.; St. Onge, S.; Eshun, E.; Cooper, P.; Johnson, J.; Rieh, Jae-Sung; Ramachandran, V.; Ahlgren, D.; Wang, D.; Wang, X.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 2002. p. 135-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dunn, J, Freeman, G, Harame, D, Joseph, A, Coolbaugh, D, Groves, R, Stein, K, Volant, R, Subbanna, S, Marangos, VS, St. Onge, S, Eshun, E, Cooper, P, Johnson, J, Rieh, J-S, Ramachandran, V, Ahlgren, D, Wang, D & Wang, X 2002, Product applications and technology directions with SiGe BiCMOS. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). pp. 135-138, Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States, 02/10/20.
Dunn J, Freeman G, Harame D, Joseph A, Coolbaugh D, Groves R et al. Product applications and technology directions with SiGe BiCMOS. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 2002. p. 135-138
Dunn, J. ; Freeman, G. ; Harame, D. ; Joseph, A. ; Coolbaugh, D. ; Groves, R. ; Stein, K. ; Volant, R. ; Subbanna, S. ; Marangos, V. S. ; St. Onge, S. ; Eshun, E. ; Cooper, P. ; Johnson, J. ; Rieh, Jae-Sung ; Ramachandran, V. ; Ahlgren, D. ; Wang, D. ; Wang, X. / Product applications and technology directions with SiGe BiCMOS. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 2002. pp. 135-138
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