Product applications and technology directions with SiGe BiCMOS

J. Dunn, G. Freeman, D. Harame, A. Joseph, D. Coolbaugh, R. Groves, K. Stein, R. Volant, S. Subbanna, V. S. Marangos, S. St. Onge, E. Eshun, P. Cooper, J. Johnson, J. Rieh, V. Ramachandran, D. Ahlgren, D. Wang, X. Wang

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

The effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications were discussed. The key component of the device was the SiGe-base HBT whose performance was improved to over 200 GHz in the 0.13 μm generation. The advantage of the technology over other platforms includes the ability to integrate different functions on a single chip.

Original languageEnglish
Pages135-138
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
EventProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
Duration: 2002 Oct 202002 Oct 23

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CountryUnited States
CityMonterey, CA
Period02/10/2002/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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