Programmable high speed multi-level simultaneous bidirectional I/O

Yong Sin Kim, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper describes a programmable high speed multi-level simultaneous bi-directional I/O. With programmable high speed differential current switching, the static current flow becomes dependent upon the number of bits in the outgoing data, from O-bit to 2-bit. The pre-emphasis method was implemented to enhance the transmission speed. Simulation results based on 0.18fxm CMOS process show the maximum data rate can be enhanced to 4.8Gb/s/pin. Timing window and voltage window are 480ps and 43mV, respectively.

Original languageEnglish
Title of host publicationProceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
Pages416-419
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event8th International Symposium on Quality Electronic Design, ISQED 2007 - San Jose, CA, United States
Duration: 2007 Mar 262007 Mar 28

Publication series

NameProceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007

Other

Other8th International Symposium on Quality Electronic Design, ISQED 2007
CountryUnited States
CitySan Jose, CA
Period07/3/2607/3/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Kim, Y. S., & Kang, S. M. (2007). Programmable high speed multi-level simultaneous bidirectional I/O. In Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007 (pp. 416-419). [4149071] (Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007). https://doi.org/10.1109/ISQED.2007.128