TY - GEN
T1 - Programmable high speed multi-level simultaneous bidirectional I/O
AU - Kim, Yong Sin
AU - Kang, Sung Mo
PY - 2007
Y1 - 2007
N2 - This paper describes a programmable high speed multi-level simultaneous bi-directional I/O. With programmable high speed differential current switching, the static current flow becomes dependent upon the number of bits in the outgoing data, from O-bit to 2-bit. The pre-emphasis method was implemented to enhance the transmission speed. Simulation results based on 0.18fxm CMOS process show the maximum data rate can be enhanced to 4.8Gb/s/pin. Timing window and voltage window are 480ps and 43mV, respectively.
AB - This paper describes a programmable high speed multi-level simultaneous bi-directional I/O. With programmable high speed differential current switching, the static current flow becomes dependent upon the number of bits in the outgoing data, from O-bit to 2-bit. The pre-emphasis method was implemented to enhance the transmission speed. Simulation results based on 0.18fxm CMOS process show the maximum data rate can be enhanced to 4.8Gb/s/pin. Timing window and voltage window are 480ps and 43mV, respectively.
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U2 - 10.1109/ISQED.2007.128
DO - 10.1109/ISQED.2007.128
M3 - Conference contribution
AN - SCOPUS:34548128217
SN - 0769527957
SN - 9780769527956
T3 - Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
SP - 416
EP - 419
BT - Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
T2 - 8th International Symposium on Quality Electronic Design, ISQED 2007
Y2 - 26 March 2007 through 28 March 2007
ER -