Programmable Synapse-Like MoS2 Field-Effect Transistors Phase-Engineered by Dynamic Lithium Ion Modulation

Hyunik Park, Jihyun Kim

Research output: Contribution to journalArticle

Abstract

Synaptic transistors, inspired by brain plasticity, have shown strong potential as neuromorphic computing elements. Employing 2D materials for synaptic devices can provide an additional degree-of-freedom for monolithically integrated circuits owing to their atomically thin body and suitable electrical properties. Herein, a programmable molybdenum disulfide (MoS2) field-effect transistor (FET) that emulates synaptic interaction via phase engineering, which is assisted by field-driven ionic modulation, is reported. Li+ ions selectively introduced into the van der Waals gap of the multilayer MoS2 convert the 2H phase (semiconducting) into the 1T' phase (metallic), resulting in a seamless and reversible 1T'/2H heterophase homojunction device. The 1T'-MoS2 region exhibits dynamic resistive switching behavior in a non-volatile fashion with a switching ratio of ≈10 owing to the Li+ ion redistribution under the applied electric field. By controlling the Schottky barrier height of the 1T'-MoS2 channel, the behaviors of the monolithically integrated 1T'/2H-MoS2 FET can be programmed with non-volatility. The 1T'/2H-MoS2 heterophase homojunction device shows multilevel current output with a multistate computing window, indicating its potential as a stable multilevel neuro synaptic device. These results could enable the development of highly functional and energy-efficient neuromorphic systems via the monolithic integration of 2D materials.

Original languageEnglish
JournalAdvanced Electronic Materials
DOIs
Publication statusAccepted/In press - 2020 Jan 1

Keywords

  • 2D materials
  • field-effect transistors
  • ion intercalation
  • phase engineering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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