Properties of boron-rich layer formed by boron diffusion in n-type silicon

Chanseok Kim, Sungeun Park, Young Do Kim, Hyomin Park, Seongtak Kim, Hyunho Kim, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 °C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023 atoms/cm3. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5-2.0, and the contact resistance of 0.8 mΩ cm2.

Original languageEnglish
Pages (from-to)253-257
Number of pages5
JournalThin Solid Films
Volume564
DOIs
Publication statusPublished - 2014 Aug 1

Keywords

  • Boron emitter
  • Boron-rich layer
  • Material property
  • n-Type silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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