Properties of boron-rich layer formed by boron diffusion in n-type silicon

Chanseok Kim, Sungeun Park, Young Do Kim, Hyomin Park, Seongtak Kim, Hyunho Kim, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 °C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023 atoms/cm3. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5-2.0, and the contact resistance of 0.8 mΩ cm2.

Original languageEnglish
Pages (from-to)253-257
Number of pages5
JournalThin Solid Films
Volume564
DOIs
Publication statusPublished - 2014 Aug 1

Fingerprint

Boron
Silicon
boron
silicon
Oxygen
Atoms
Contact resistance
contact resistance
furnaces
oxygen atoms
Refractive index
Solar cells
emitters
Furnaces
solar cells
refractivity
tubes
Crystalline materials

ASJC Scopus subject areas

  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Electronic, Optical and Magnetic Materials

Cite this

Properties of boron-rich layer formed by boron diffusion in n-type silicon. / Kim, Chanseok; Park, Sungeun; Kim, Young Do; Park, Hyomin; Kim, Seongtak; Kim, Hyunho; Lee, Haeseok; Kim, Donghwan.

In: Thin Solid Films, Vol. 564, 01.08.2014, p. 253-257.

Research output: Contribution to journalArticle

Kim, Chanseok ; Park, Sungeun ; Kim, Young Do ; Park, Hyomin ; Kim, Seongtak ; Kim, Hyunho ; Lee, Haeseok ; Kim, Donghwan. / Properties of boron-rich layer formed by boron diffusion in n-type silicon. In: Thin Solid Films. 2014 ; Vol. 564. pp. 253-257.
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