Properties of copper layer on Si(100) from Cu(dmamb)2

Seong Eon Jin, Dohan Lee, Seungmoo Lee, Jong Mun Choi, Bumjoon Kim, Chang Gyoun Kim, Tack Mo Chung, Dong Jin Byun

Research output: Contribution to journalArticle

Abstract

Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb)2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100). Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb)2 precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity.

Original languageEnglish
Pages (from-to)307-310
Number of pages4
JournalSurface Review and Letters
Volume17
Issue number3
DOIs
Publication statusPublished - 2010 Jun 1

Keywords

  • barrier layer
  • buffer layer
  • Cu(dmamb)
  • CVD
  • diffusion

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films

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  • Cite this

    Jin, S. E., Lee, D., Lee, S., Choi, J. M., Kim, B., Kim, C. G., Chung, T. M., & Byun, D. J. (2010). Properties of copper layer on Si(100) from Cu(dmamb)2 Surface Review and Letters, 17(3), 307-310. https://doi.org/10.1142/S0218625X10013801