Properties of epitaxial GaN on refractory metal substrates

Jaime A. Freitas, Larry B. Rowland, Ji Hyun Kim, Mohammad Fatemi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The authors demonstrate here that GaN films with good surface morphology and structural, optical, and electronic properties can be grown on metallic titanium carbide substrates. X-ray rocking curve and Raman scattering measurements confirmed the high crystalline quality of the wurtzite structure film. Variable temperature photoluminescence measurements of sharp and intense emission lines provided insights into the nature of the recombination processes, the carrier background type, and the carrier concentration. The high quality of the interface and substrate Ohmic contacts was verified. The ability to grow high-quality films on metallic substrates provides the means for advanced vertical and high-power and/or high-temperature device fabrication.

Original languageEnglish
Article number091910
JournalApplied Physics Letters
Volume90
Issue number9
DOIs
Publication statusPublished - 2007 Mar 9

Fingerprint

refractory metals
titanium carbides
wurtzite
electric contacts
Raman spectra
photoluminescence
optical properties
fabrication
curves
scattering
electronics
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Properties of epitaxial GaN on refractory metal substrates. / Freitas, Jaime A.; Rowland, Larry B.; Kim, Ji Hyun; Fatemi, Mohammad.

In: Applied Physics Letters, Vol. 90, No. 9, 091910, 09.03.2007.

Research output: Contribution to journalArticle

Freitas, Jaime A. ; Rowland, Larry B. ; Kim, Ji Hyun ; Fatemi, Mohammad. / Properties of epitaxial GaN on refractory metal substrates. In: Applied Physics Letters. 2007 ; Vol. 90, No. 9.
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