Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication

J. A. Freitas, J. G. Tischler, Ji Hyun Kim, Y. Kumagai, A. Koukitu

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10 Citations (Scopus)

Abstract

Thick freestanding GaN films were grown by hydride vapor-phase epitaxial method on both pattern-masked and unmasked GaAs substrates. Both approaches resulted on films characterized by a large excess of free carriers at room temperature. The use of a GaAs back surface NiTi substrate protective layer increased the concentration of incorporated iron impurities and yield semi-insulating films. The morphology and crystalline quality of these films show a strong dependence on nucleation layer growth approach and Fe doping concentration. Near infrared photoluminescence and Raman scattering verified the incorporation and activation of the Fe impurities, and its effect on the free carrier concentration.

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalJournal of Crystal Growth
Volume305
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Jul 15

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Keywords

  • A1. Emission
  • A1. Impurities
  • A2. Freestanding films
  • A3. Grown from vapor
  • B1. Nitrides
  • B2. Semiconductor

ASJC Scopus subject areas

  • Condensed Matter Physics

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