Properties of fluorine doped ZnO thin films deposited by magnetron sputtering

H. S. Yoon, K. S. Lee, T. S. Lee, B. Cheong, D. K. Choi, Donghwan Kim, W. M. Kim

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

Fluorine doped ZnO (FZO) films were deposited on Corning glass by radio frequency (rf) magnetron sputtering of pure ZnO target in CF4 containing gas mixtures, and the compositional, electrical, optical, and structural properties of the as-grown films as well as the vacuum-annealed films were investigated. The fluorine content in FZO films increased with increasing CF4 content in sputter gas. FZO films deposited at elevated temperature of 150 °C had considerably lower fluorine content and showed a poorer electrical properties than the films deposited at room temperature. Despite high fluorine contents in the films, for all the FZO films, the carrier concentration remained below 2×1020 cm-3, leading to fairly low doping efficiency level. Vacuum-annealing of the FZO films deposited at room temperature resulted in substantial increase of Hall mobilities, reaching as high as 43 cm2/Vs. This was attributed partly to the removing of oxygen vacancies and/or the forming chemical bonds with interstitial zinc atoms by fluorine interstitials and partly to the passivation effect of excess fluorine atoms by filling in the dangling bonds at the grain boundaries. For all the films with thickness of around 300 nm, the optical transmissions in visible were higher than 80%, and increased with increasing fluorine content up to 85% for the film with highest fluorine content.

Original languageEnglish
Pages (from-to)1366-1372
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume92
Issue number11
DOIs
Publication statusPublished - 2008 Nov 1

Fingerprint

Fluorine
Magnetron sputtering
Thin films
Electric properties
Vacuum
Atoms
Hall mobility
Dangling bonds
Chemical bonds
Oxygen vacancies
Light transmission
Passivation
Gas mixtures
Temperature
Carrier concentration
Zinc
Structural properties
Grain boundaries
Optical properties
Gases

Keywords

  • Fluorine doped ZnO film
  • Magnetron sputtering
  • Transparent conducting oxide
  • Vacuum-annealing

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Properties of fluorine doped ZnO thin films deposited by magnetron sputtering. / Yoon, H. S.; Lee, K. S.; Lee, T. S.; Cheong, B.; Choi, D. K.; Kim, Donghwan; Kim, W. M.

In: Solar Energy Materials and Solar Cells, Vol. 92, No. 11, 01.11.2008, p. 1366-1372.

Research output: Contribution to journalArticle

Yoon, H. S. ; Lee, K. S. ; Lee, T. S. ; Cheong, B. ; Choi, D. K. ; Kim, Donghwan ; Kim, W. M. / Properties of fluorine doped ZnO thin films deposited by magnetron sputtering. In: Solar Energy Materials and Solar Cells. 2008 ; Vol. 92, No. 11. pp. 1366-1372.
@article{722c75d7428d477daa15ba72fcd1f28a,
title = "Properties of fluorine doped ZnO thin films deposited by magnetron sputtering",
abstract = "Fluorine doped ZnO (FZO) films were deposited on Corning glass by radio frequency (rf) magnetron sputtering of pure ZnO target in CF4 containing gas mixtures, and the compositional, electrical, optical, and structural properties of the as-grown films as well as the vacuum-annealed films were investigated. The fluorine content in FZO films increased with increasing CF4 content in sputter gas. FZO films deposited at elevated temperature of 150 °C had considerably lower fluorine content and showed a poorer electrical properties than the films deposited at room temperature. Despite high fluorine contents in the films, for all the FZO films, the carrier concentration remained below 2×1020 cm-3, leading to fairly low doping efficiency level. Vacuum-annealing of the FZO films deposited at room temperature resulted in substantial increase of Hall mobilities, reaching as high as 43 cm2/Vs. This was attributed partly to the removing of oxygen vacancies and/or the forming chemical bonds with interstitial zinc atoms by fluorine interstitials and partly to the passivation effect of excess fluorine atoms by filling in the dangling bonds at the grain boundaries. For all the films with thickness of around 300 nm, the optical transmissions in visible were higher than 80{\%}, and increased with increasing fluorine content up to 85{\%} for the film with highest fluorine content.",
keywords = "Fluorine doped ZnO film, Magnetron sputtering, Transparent conducting oxide, Vacuum-annealing",
author = "Yoon, {H. S.} and Lee, {K. S.} and Lee, {T. S.} and B. Cheong and Choi, {D. K.} and Donghwan Kim and Kim, {W. M.}",
year = "2008",
month = "11",
day = "1",
doi = "10.1016/j.solmat.2008.05.010",
language = "English",
volume = "92",
pages = "1366--1372",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "11",

}

TY - JOUR

T1 - Properties of fluorine doped ZnO thin films deposited by magnetron sputtering

AU - Yoon, H. S.

AU - Lee, K. S.

AU - Lee, T. S.

AU - Cheong, B.

AU - Choi, D. K.

AU - Kim, Donghwan

AU - Kim, W. M.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Fluorine doped ZnO (FZO) films were deposited on Corning glass by radio frequency (rf) magnetron sputtering of pure ZnO target in CF4 containing gas mixtures, and the compositional, electrical, optical, and structural properties of the as-grown films as well as the vacuum-annealed films were investigated. The fluorine content in FZO films increased with increasing CF4 content in sputter gas. FZO films deposited at elevated temperature of 150 °C had considerably lower fluorine content and showed a poorer electrical properties than the films deposited at room temperature. Despite high fluorine contents in the films, for all the FZO films, the carrier concentration remained below 2×1020 cm-3, leading to fairly low doping efficiency level. Vacuum-annealing of the FZO films deposited at room temperature resulted in substantial increase of Hall mobilities, reaching as high as 43 cm2/Vs. This was attributed partly to the removing of oxygen vacancies and/or the forming chemical bonds with interstitial zinc atoms by fluorine interstitials and partly to the passivation effect of excess fluorine atoms by filling in the dangling bonds at the grain boundaries. For all the films with thickness of around 300 nm, the optical transmissions in visible were higher than 80%, and increased with increasing fluorine content up to 85% for the film with highest fluorine content.

AB - Fluorine doped ZnO (FZO) films were deposited on Corning glass by radio frequency (rf) magnetron sputtering of pure ZnO target in CF4 containing gas mixtures, and the compositional, electrical, optical, and structural properties of the as-grown films as well as the vacuum-annealed films were investigated. The fluorine content in FZO films increased with increasing CF4 content in sputter gas. FZO films deposited at elevated temperature of 150 °C had considerably lower fluorine content and showed a poorer electrical properties than the films deposited at room temperature. Despite high fluorine contents in the films, for all the FZO films, the carrier concentration remained below 2×1020 cm-3, leading to fairly low doping efficiency level. Vacuum-annealing of the FZO films deposited at room temperature resulted in substantial increase of Hall mobilities, reaching as high as 43 cm2/Vs. This was attributed partly to the removing of oxygen vacancies and/or the forming chemical bonds with interstitial zinc atoms by fluorine interstitials and partly to the passivation effect of excess fluorine atoms by filling in the dangling bonds at the grain boundaries. For all the films with thickness of around 300 nm, the optical transmissions in visible were higher than 80%, and increased with increasing fluorine content up to 85% for the film with highest fluorine content.

KW - Fluorine doped ZnO film

KW - Magnetron sputtering

KW - Transparent conducting oxide

KW - Vacuum-annealing

UR - http://www.scopus.com/inward/record.url?scp=50249177010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249177010&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2008.05.010

DO - 10.1016/j.solmat.2008.05.010

M3 - Article

VL - 92

SP - 1366

EP - 1372

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 11

ER -