We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H<inf>c</inf>) of 188 Oe and a remanent magnetization of 102 emu cm<sup>-3</sup> at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at room temperature.
ASJC Scopus subject areas
- Materials Chemistry