Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Chang Soo Park, Yu Zhao, Yoon Shon, Im Taek Yoon, Cheol Jin Lee, Jin Dong Song, Haigun Lee, Eun Kyu Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H<inf>c</inf>) of 188 Oe and a remanent magnetization of 102 emu cm<sup>-3</sup> at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at room temperature.

Original languageEnglish
Pages (from-to)4235-4238
Number of pages4
JournalJournal of Materials Chemistry C
Volume3
Issue number17
DOIs
Publication statusPublished - 2015 May 7

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Manganese
Graphene
Chemical vapor deposition
Semiconductor materials
Field effect transistors
Energy gap
Temperature
Magnetization

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition. / Park, Chang Soo; Zhao, Yu; Shon, Yoon; Yoon, Im Taek; Lee, Cheol Jin; Song, Jin Dong; Lee, Haigun; Kim, Eun Kyu.

In: Journal of Materials Chemistry C, Vol. 3, No. 17, 07.05.2015, p. 4235-4238.

Research output: Contribution to journalArticle

Park, Chang Soo ; Zhao, Yu ; Shon, Yoon ; Yoon, Im Taek ; Lee, Cheol Jin ; Song, Jin Dong ; Lee, Haigun ; Kim, Eun Kyu. / Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition. In: Journal of Materials Chemistry C. 2015 ; Vol. 3, No. 17. pp. 4235-4238.
@article{3e3219c9e3b643d395632f2c287b69cc,
title = "Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition",
abstract = "We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V-1 s-1 at room temperature.",
author = "Park, {Chang Soo} and Yu Zhao and Yoon Shon and Yoon, {Im Taek} and Lee, {Cheol Jin} and Song, {Jin Dong} and Haigun Lee and Kim, {Eun Kyu}",
year = "2015",
month = "5",
day = "7",
doi = "10.1039/c5tc00051c",
language = "English",
volume = "3",
pages = "4235--4238",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "17",

}

TY - JOUR

T1 - Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

AU - Park, Chang Soo

AU - Zhao, Yu

AU - Shon, Yoon

AU - Yoon, Im Taek

AU - Lee, Cheol Jin

AU - Song, Jin Dong

AU - Lee, Haigun

AU - Kim, Eun Kyu

PY - 2015/5/7

Y1 - 2015/5/7

N2 - We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V-1 s-1 at room temperature.

AB - We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V-1 s-1 at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84928539911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928539911&partnerID=8YFLogxK

U2 - 10.1039/c5tc00051c

DO - 10.1039/c5tc00051c

M3 - Article

AN - SCOPUS:84928539911

VL - 3

SP - 4235

EP - 4238

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 17

ER -