Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Chang Soo Park, Yu Zhao, Yoon Shon, Im Taek Yoon, Cheol Jin Lee, Jin Dong Song, Haigun Lee, Eun Kyu Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H<inf>c</inf>) of 188 Oe and a remanent magnetization of 102 emu cm<sup>-3</sup> at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at room temperature.

Original languageEnglish
Pages (from-to)4235-4238
Number of pages4
JournalJournal of Materials Chemistry C
Volume3
Issue number17
DOIs
Publication statusPublished - 2015 May 7

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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