Properties of the quantum wires grown on V-grooved Al0.3Ga 0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition

Min Suk Lee; Yong Kim; Moo Song Kim; Seong Ii Kim; Suk Ki Min; Young Duk Kim; Sahn Nahm

doi:10.1063/1.110255

Properties of the quantum wires grown on V-grooved Al_0.3Ga _0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition

Min Suk Lee, Yong Kim, Moo Song Kim, Seong Ii Kim, Suk Ki Min, Young Duk Kim, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report the successful growth of quantum wire (QWR) structures of Al _xGa_1-xAs/ GaAs /Al_xGa_1-xAs on a V-grooved Al_0.3Ga_0.7As/GaAs substrate. The samples are studied by photoluminescence spectra. The structures are grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The GaAs QWRs are fabricated on a V-grooved Al_0.3Ga_0.7As/GaAs substrate instead of GaAs substrate. Due to the effect of the Al_0.3Ga _0.7As layer, a necking area is formed in the side quantum wells (QWLs) near the bottom of the V groove. This results in a reduction of the lateral widths of the QWRs. Also, the luminescence of the QWRs is greatly enhanced in spite of low packing density. It is the first structure made in attempts to produce the quantum-size effects on a V-grooved substrate with non-(111) facets.

Original language	English
Pages (from-to)	3052-3054
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	22
DOIs	https://doi.org/10.1063/1.110255
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Properties of the quantum wires grown on V-grooved Al0.3Ga 0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition",

abstract = "We report the successful growth of quantum wire (QWR) structures of Al xGa1-xAs/ GaAs /AlxGa1-xAs on a V-grooved Al0.3Ga0.7As/GaAs substrate. The samples are studied by photoluminescence spectra. The structures are grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The GaAs QWRs are fabricated on a V-grooved Al0.3Ga0.7As/GaAs substrate instead of GaAs substrate. Due to the effect of the Al0.3Ga 0.7As layer, a necking area is formed in the side quantum wells (QWLs) near the bottom of the V groove. This results in a reduction of the lateral widths of the QWRs. Also, the luminescence of the QWRs is greatly enhanced in spite of low packing density. It is the first structure made in attempts to produce the quantum-size effects on a V-grooved substrate with non-(111) facets.",

author = "Lee, {Min Suk} and Yong Kim and Kim, {Moo Song} and Kim, {Seong Ii} and Min, {Suk Ki} and Kim, {Young Duk} and Sahn Nahm",

year = "1993",

doi = "10.1063/1.110255",

language = "English",

volume = "63",

pages = "3052--3054",

journal = "Applied Physics Letters",

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T1 - Properties of the quantum wires grown on V-grooved Al0.3Ga 0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition

AU - Lee, Min Suk

AU - Kim, Yong

AU - Kim, Moo Song

AU - Kim, Seong Ii

AU - Min, Suk Ki

AU - Kim, Young Duk

AU - Nahm, Sahn

PY - 1993

Y1 - 1993

N2 - We report the successful growth of quantum wire (QWR) structures of Al xGa1-xAs/ GaAs /AlxGa1-xAs on a V-grooved Al0.3Ga0.7As/GaAs substrate. The samples are studied by photoluminescence spectra. The structures are grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The GaAs QWRs are fabricated on a V-grooved Al0.3Ga0.7As/GaAs substrate instead of GaAs substrate. Due to the effect of the Al0.3Ga 0.7As layer, a necking area is formed in the side quantum wells (QWLs) near the bottom of the V groove. This results in a reduction of the lateral widths of the QWRs. Also, the luminescence of the QWRs is greatly enhanced in spite of low packing density. It is the first structure made in attempts to produce the quantum-size effects on a V-grooved substrate with non-(111) facets.

AB - We report the successful growth of quantum wire (QWR) structures of Al xGa1-xAs/ GaAs /AlxGa1-xAs on a V-grooved Al0.3Ga0.7As/GaAs substrate. The samples are studied by photoluminescence spectra. The structures are grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The GaAs QWRs are fabricated on a V-grooved Al0.3Ga0.7As/GaAs substrate instead of GaAs substrate. Due to the effect of the Al0.3Ga 0.7As layer, a necking area is formed in the side quantum wells (QWLs) near the bottom of the V groove. This results in a reduction of the lateral widths of the QWRs. Also, the luminescence of the QWRs is greatly enhanced in spite of low packing density. It is the first structure made in attempts to produce the quantum-size effects on a V-grooved substrate with non-(111) facets.

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JF - Applied Physics Letters

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Properties of the quantum wires grown on V-grooved Al_0.3Ga _0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition

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