Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, In Hwan Lee, Jin Woo Ju, S. Yu Karpov, N. M. Shmidt, S. J. Pearton

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Abstract

High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on epitaxial laterally overgrown (ELOG) n-GaN platform layers. These experiments show a very good crystalline quality of the MQW ELOG GaN/InGaN structures with a dislocation density of ∼ 106 cm-2 in the laterally overgrown ELOG wings regions. Admittance and DLTS spectra show the presence of a prominent electron-trap signal with activation energy ∼0.4 eV likely originating from electron activation from the lowest occupied state in the quantum wells. MCL spectra clearly show a redshift of luminescence in the laterally grown ELOG wings compared to the normally grown ELOG windows. Modeling based on solving Poisson-Schroedinger equations suggests that the main reason for the observed redshift is a higher indium content in the wings.

Original languageEnglish
Article number123708
JournalJournal of Applied Physics
Volume105
Issue number12
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Markov, A. V., Lee, I. H., Ju, J. W., Karpov, S. Y., Shmidt, N. M., & Pearton, S. J. (2009). Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth. Journal of Applied Physics, 105(12), [123708]. https://doi.org/10.1063/1.3153967