Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, In-Hwan Lee, Jin Woo Ju, S. Yu Karpov, N. M. Shmidt, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on epitaxial laterally overgrown (ELOG) n-GaN platform layers. These experiments show a very good crystalline quality of the MQW ELOG GaN/InGaN structures with a dislocation density of ∼ 106 cm-2 in the laterally overgrown ELOG wings regions. Admittance and DLTS spectra show the presence of a prominent electron-trap signal with activation energy ∼0.4 eV likely originating from electron activation from the lowest occupied state in the quantum wells. MCL spectra clearly show a redshift of luminescence in the laterally grown ELOG wings compared to the normally grown ELOG windows. Modeling based on solving Poisson-Schroedinger equations suggests that the main reason for the observed redshift is a higher indium content in the wings.

Original languageEnglish
Article number123708
JournalJournal of Applied Physics
Volume105
Issue number12
DOIs
Publication statusPublished - 2009 Jul 16
Externally publishedYes

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p-n junctions
wings
quantum wells
electrical impedance
spectroscopy
Schroedinger equation
indium
x ray diffraction
electrons
platforms
capacitance
traps
activation
electron beams
luminescence
activation energy
high resolution
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth. / Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Markov, A. V.; Lee, In-Hwan; Ju, Jin Woo; Karpov, S. Yu; Shmidt, N. M.; Pearton, S. J.

In: Journal of Applied Physics, Vol. 105, No. 12, 123708, 16.07.2009.

Research output: Contribution to journalArticle

Polyakov, AY, Govorkov, AV, Smirnov, NB, Markov, AV, Lee, I-H, Ju, JW, Karpov, SY, Shmidt, NM & Pearton, SJ 2009, 'Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth', Journal of Applied Physics, vol. 105, no. 12, 123708. https://doi.org/10.1063/1.3153967
Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Markov, A. V. ; Lee, In-Hwan ; Ju, Jin Woo ; Karpov, S. Yu ; Shmidt, N. M. ; Pearton, S. J. / Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 12.
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AU - Smirnov, N. B.

AU - Markov, A. V.

AU - Lee, In-Hwan

AU - Ju, Jin Woo

AU - Karpov, S. Yu

AU - Shmidt, N. M.

AU - Pearton, S. J.

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