Properties of ZnO thin films co-doped with hydrogen and fluorine

Yong Hyun Kim, Jin Soo Kim, Jeung Hyun Jeong, Jong Keuk Park, Young Joon Baik, Kyeong Seok Lee, Byung Ki Cheong, Donghwan Kim, Tae Yeon Seong, Won Mok Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

ZnO films co-doped with fluorine and hydrogen were prepared on Corning glass by radio frequency magnetron sputtering of ZnO targets with varying amounts of ZnF 2 in H 2/Ar gas mixtures of varying H 2 content. The ZnO films' electrical, optical, and structural properties in combination with their compositional properties were investigated. A small addition of H 2 to the sputtering gas caused a drastic increase of Hall mobility with a marginal increase in carrier concentration, indicating an effective passivation of grain boundaries due to hydrogenation. For further increase of H 2 in sputter gas, the Hall mobility remained at a relatively constant level while the carrier concentration increased steadily. Most of the ZnO films co-doped with fluorine and hydrogen showed average transmittance higher than 83% in the 400-800 nm range, while the average absorption coefficients were lower than 600 cm -1, implying very low absorption loss in these films. It was discovered that the fabrication of ZnO films with a Hall mobility higher than 40 cm 2/Vs and a very low absorption loss in the visible range is possible by co-doping hydrogen and fluorine.

Original languageEnglish
Pages (from-to)3665-3668
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Fingerprint

Fluorine
fluorine
Hydrogen
Gases
Hall mobility
Thin films
hydrogen
thin films
Hydrogenation
Carrier concentration
Radio
Glass
gases
Passivation
Gas mixtures
Magnetron sputtering
passivity
hydrogenation
Sputtering
gas mixtures

Keywords

  • Doped ZnO
  • Fluorine
  • Hydrogen
  • Rf magnetron sputtering
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Kim, Y. H., Kim, J. S., Jeong, J. H., Park, J. K., Baik, Y. J., Lee, K. S., ... Kim, W. M. (2012). Properties of ZnO thin films co-doped with hydrogen and fluorine. Journal of Nanoscience and Nanotechnology, 12(4), 3665-3668. https://doi.org/10.1166/jnn.2012.5627

Properties of ZnO thin films co-doped with hydrogen and fluorine. / Kim, Yong Hyun; Kim, Jin Soo; Jeong, Jeung Hyun; Park, Jong Keuk; Baik, Young Joon; Lee, Kyeong Seok; Cheong, Byung Ki; Kim, Donghwan; Seong, Tae Yeon; Kim, Won Mok.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 06.07.2012, p. 3665-3668.

Research output: Contribution to journalArticle

Kim, YH, Kim, JS, Jeong, JH, Park, JK, Baik, YJ, Lee, KS, Cheong, BK, Kim, D, Seong, TY & Kim, WM 2012, 'Properties of ZnO thin films co-doped with hydrogen and fluorine', Journal of Nanoscience and Nanotechnology, vol. 12, no. 4, pp. 3665-3668. https://doi.org/10.1166/jnn.2012.5627
Kim, Yong Hyun ; Kim, Jin Soo ; Jeong, Jeung Hyun ; Park, Jong Keuk ; Baik, Young Joon ; Lee, Kyeong Seok ; Cheong, Byung Ki ; Kim, Donghwan ; Seong, Tae Yeon ; Kim, Won Mok. / Properties of ZnO thin films co-doped with hydrogen and fluorine. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 4. pp. 3665-3668.
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