Properties of ZnO thin films co-doped with hydrogen and fluorine

Yong Hyun Kim, Jin Soo Kim, Jeung Hyun Jeong, Jong Keuk Park, Young Joon Baik, Kyeong Seok Lee, Byung Ki Cheong, Donghwan Kim, Tae Yeon Seong, Won Mok Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


ZnO films co-doped with fluorine and hydrogen were prepared on Corning glass by radio frequency magnetron sputtering of ZnO targets with varying amounts of ZnF 2 in H 2/Ar gas mixtures of varying H 2 content. The ZnO films' electrical, optical, and structural properties in combination with their compositional properties were investigated. A small addition of H 2 to the sputtering gas caused a drastic increase of Hall mobility with a marginal increase in carrier concentration, indicating an effective passivation of grain boundaries due to hydrogenation. For further increase of H 2 in sputter gas, the Hall mobility remained at a relatively constant level while the carrier concentration increased steadily. Most of the ZnO films co-doped with fluorine and hydrogen showed average transmittance higher than 83% in the 400-800 nm range, while the average absorption coefficients were lower than 600 cm -1, implying very low absorption loss in these films. It was discovered that the fabrication of ZnO films with a Hall mobility higher than 40 cm 2/Vs and a very low absorption loss in the visible range is possible by co-doping hydrogen and fluorine.

Original languageEnglish
Pages (from-to)3665-3668
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number4
Publication statusPublished - 2012


  • Doped ZnO
  • Fluorine
  • Hydrogen
  • Rf magnetron sputtering
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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