Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo, C. Y. Chang, B. H. Chu, H. Y. Kim, Ji Hyun Kim, David A. Cullen, Lin Zhou, David J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, F. Ren

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

Original languageEnglish
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume28
Issue number5
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
Drain current
Protons
protons
Bias voltage
fluence
time lag
Modulation
traps
Scattering
saturation
modulation
Radiation
dosage
electric potential
radiation
scattering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Proton irradiation effects on AlN/GaN high electron mobility transistors. / Lo, C. F.; Chang, C. Y.; Chu, B. H.; Kim, H. Y.; Kim, Ji Hyun; Cullen, David A.; Zhou, Lin; Smith, David J.; Pearton, S. J.; Dabiran, Amir; Cui, B.; Chow, P. P.; Jang, S.; Ren, F.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 28, No. 5, 01.09.2010.

Research output: Contribution to journalArticle

Lo, CF, Chang, CY, Chu, BH, Kim, HY, Kim, JH, Cullen, DA, Zhou, L, Smith, DJ, Pearton, SJ, Dabiran, A, Cui, B, Chow, PP, Jang, S & Ren, F 2010, 'Proton irradiation effects on AlN/GaN high electron mobility transistors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 28, no. 5. https://doi.org/10.1116/1.3482335
Lo, C. F. ; Chang, C. Y. ; Chu, B. H. ; Kim, H. Y. ; Kim, Ji Hyun ; Cullen, David A. ; Zhou, Lin ; Smith, David J. ; Pearton, S. J. ; Dabiran, Amir ; Cui, B. ; Chow, P. P. ; Jang, S. ; Ren, F. / Proton irradiation effects on AlN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2010 ; Vol. 28, No. 5.
@article{bece478955d7461fa535276c04ec022c,
title = "Proton irradiation effects on AlN/GaN high electron mobility transistors",
abstract = "AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10{\%} to 35{\%} of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.",
author = "Lo, {C. F.} and Chang, {C. Y.} and Chu, {B. H.} and Kim, {H. Y.} and Kim, {Ji Hyun} and Cullen, {David A.} and Lin Zhou and Smith, {David J.} and Pearton, {S. J.} and Amir Dabiran and B. Cui and Chow, {P. P.} and S. Jang and F. Ren",
year = "2010",
month = "9",
day = "1",
doi = "10.1116/1.3482335",
language = "English",
volume = "28",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Proton irradiation effects on AlN/GaN high electron mobility transistors

AU - Lo, C. F.

AU - Chang, C. Y.

AU - Chu, B. H.

AU - Kim, H. Y.

AU - Kim, Ji Hyun

AU - Cullen, David A.

AU - Zhou, Lin

AU - Smith, David J.

AU - Pearton, S. J.

AU - Dabiran, Amir

AU - Cui, B.

AU - Chow, P. P.

AU - Jang, S.

AU - Ren, F.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

AB - AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

UR - http://www.scopus.com/inward/record.url?scp=77957741389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957741389&partnerID=8YFLogxK

U2 - 10.1116/1.3482335

DO - 10.1116/1.3482335

M3 - Article

VL - 28

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 5

ER -