In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2009 Dec 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering