Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

Chien Fong Lo; Lu Liu; Fan Ren; Stephen J. Pearton; Brent P. Gila; Hong Yeol Kim; Jihyun Kim; Oleg Laboutin; Yu Cao; Jerry W. Johnson; Ivan I. Kravchenko

doi:10.1116/1.4729285

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 10¹⁵ cm^-2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (f_T) and maximum oscillation frequency (f_max) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm^-1 over the range of proton energies investigated.

Original language	English
Article number	041206
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4729285
Publication status	Published - 2012 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Lo, C. F., Liu, L., Ren, F., Pearton, S. J., Gila, B. P., Kim, H. Y., Kim, J., Laboutin, O., Cao, Y., Johnson, J. W., & Kravchenko, I. I. (2012). Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 30(4), [041206]. https://doi.org/10.1116/1.4729285

Lo, CF, Liu, L, Ren, F, Pearton, SJ, Gila, BP, Kim, HY, Kim, J, Laboutin, O, Cao, Y, Johnson, JW & Kravchenko, II 2012, 'Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 30, no. 4, 041206. https://doi.org/10.1116/1.4729285

@article{ba881754246f4c06bc425871bbdab2de,

title = "Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors",

abstract = "The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 1015 cm-2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency (fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm-1 over the range of proton energies investigated.",

author = "Lo, {Chien Fong} and Lu Liu and Fan Ren and Pearton, {Stephen J.} and Gila, {Brent P.} and Kim, {Hong Yeol} and Jihyun Kim and Oleg Laboutin and Yu Cao and Johnson, {Jerry W.} and Kravchenko, {Ivan I.}",

note = "Funding Information: The work performed at UF is supported by an AFOSR MURI monitored by James Huang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy. ",

year = "2012",

month = jul,

doi = "10.1116/1.4729285",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

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TY - JOUR

T1 - Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

AU - Lo, Chien Fong

AU - Liu, Lu

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Gila, Brent P.

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Laboutin, Oleg

AU - Cao, Yu

AU - Johnson, Jerry W.

AU - Kravchenko, Ivan I.

N1 - Funding Information: The work performed at UF is supported by an AFOSR MURI monitored by James Huang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

PY - 2012/7

Y1 - 2012/7

N2 - The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 1015 cm-2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency (fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm-1 over the range of proton energies investigated.

AB - The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 1015 cm-2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency (fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm-1 over the range of proton energies investigated.

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VL - 30

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

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Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

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