Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong Yeol Kim, Ji Hyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, Ivan I. Kravchenko

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 10 15 cm -2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (f T) and maximum oscillation frequency (f max) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm -1 over the range of proton energies investigated.

Original languageEnglish
Article number041206
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number4
DOIs
Publication statusPublished - 2012 Jul 1

Fingerprint

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
Protons
degradation
Degradation
Leakage currents
leakage
Irradiation
irradiation
protons
Drain current
Sheet resistance
Cutoff frequency
Transconductance
transconductance
Contact resistance
proton energy
contact resistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors. / Lo, Chien Fong; Liu, Lu; Ren, Fan; Pearton, Stephen J.; Gila, Brent P.; Kim, Hong Yeol; Kim, Ji Hyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.; Kravchenko, Ivan I.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 4, 041206, 01.07.2012.

Research output: Contribution to journalArticle

Lo, Chien Fong ; Liu, Lu ; Ren, Fan ; Pearton, Stephen J. ; Gila, Brent P. ; Kim, Hong Yeol ; Kim, Ji Hyun ; Laboutin, Oleg ; Cao, Yu ; Johnson, Jerry W. ; Kravchenko, Ivan I. / Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2012 ; Vol. 30, No. 4.
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AU - Lo, Chien Fong

AU - Liu, Lu

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Gila, Brent P.

AU - Kim, Hong Yeol

AU - Kim, Ji Hyun

AU - Laboutin, Oleg

AU - Cao, Yu

AU - Johnson, Jerry W.

AU - Kravchenko, Ivan I.

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N2 - The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 10 15 cm -2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (f T) and maximum oscillation frequency (f max) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm -1 over the range of proton energies investigated.

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