Abstract
The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 10 15 cm -2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (f T) and maximum oscillation frequency (f max) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm -1 over the range of proton energies investigated.
| Original language | English |
|---|---|
| Article number | 041206 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 30 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 Jul 1 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors. / Lo, Chien Fong; Liu, Lu; Ren, Fan; Pearton, Stephen J.; Gila, Brent P.; Kim, Hong Yeol; Kim, Ji Hyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.; Kravchenko, Ivan I.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 4, 041206, 01.07.2012.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors
AU - Lo, Chien Fong
AU - Liu, Lu
AU - Ren, Fan
AU - Pearton, Stephen J.
AU - Gila, Brent P.
AU - Kim, Hong Yeol
AU - Kim, Ji Hyun
AU - Laboutin, Oleg
AU - Cao, Yu
AU - Johnson, Jerry W.
AU - Kravchenko, Ivan I.
PY - 2012/7/1
Y1 - 2012/7/1
N2 - The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 10 15 cm -2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (f T) and maximum oscillation frequency (f max) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm -1 over the range of proton energies investigated.
AB - The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 × 10 15 cm -2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with ∼10% degradation of the unity gain cut-off frequency (f T) and maximum oscillation frequency (f max) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm -1 over the range of proton energies investigated.
UR - http://www.scopus.com/inward/record.url?scp=84864260420&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864260420&partnerID=8YFLogxK
U2 - 10.1116/1.4729285
DO - 10.1116/1.4729285
M3 - Article
AN - SCOPUS:84864260420
VL - 30
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
M1 - 041206
ER -