Proton irradiation of high aluminum content AlGaN polarization doped field effect transistors

The effects of proton irradiation dose on the DC and switching properties of high aluminum content, polarization-doped field effect transistors (POLFETs) were studied. The POLFETs were irradiated at proton energy of 10 MeV at fluences of 1 × 10¹⁴ cm⁻² and 3 × 10¹⁴ cm⁻². The DC saturation current exhibited a 21 and 36% reduction at fluences of 1 × 10¹⁴ cm⁻² and 3 × 10¹⁴ cm⁻², respectively. The carrier removal rates for this energy was 677 cm⁻¹. However, switching current at 100 kHz demonstrated no change, with near ideal performance, as opposed to significant degradation in their GaN HEMT counterparts. This near ideal performance is attributed to the volume of the 3D electron gas in the POLFETs reducing the likelihood of negatively impacting scattering events, as opposed to the narrow 2D electron gas of the HEMT. The DC degradation and carrier removal rates are on par with reported traditional GaN HEMTs, but the switching performance is exceptionally improved.