Pt Schottky contacts to n-(Ga,Mn)N

Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson

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Abstract

The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017cm-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10-8Acm-2 (25°C) to 8.42×10-5Acm-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).

Original languageEnglish
Pages (from-to)658-660
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number4
DOIs
Publication statusPublished - 2002 Jul 22
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, J., Ren, F., Thaler, G. T., Overberg, M. E., Abernathy, C. R., Pearton, S. J., & Wilson, R. G. (2002). Pt Schottky contacts to n-(Ga,Mn)N. Applied Physics Letters, 81(4), 658-660. https://doi.org/10.1063/1.1496130