Pt Schottky contacts to n-(Ga,Mn)N

Ji Hyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017cm-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10-8Acm-2 (25°C) to 8.42×10-5Acm-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).

Original languageEnglish
Pages (from-to)658-660
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number4
DOIs
Publication statusPublished - 2002 Jul 22
Externally publishedYes

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electric contacts
thermionic emission
electrical measurement
plots
current density
activation energy
saturation
room temperature
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. H., Ren, F., Thaler, G. T., Overberg, M. E., Abernathy, C. R., Pearton, S. J., & Wilson, R. G. (2002). Pt Schottky contacts to n-(Ga,Mn)N. Applied Physics Letters, 81(4), 658-660. https://doi.org/10.1063/1.1496130

Pt Schottky contacts to n-(Ga,Mn)N. / Kim, Ji Hyun; Ren, F.; Thaler, G. T.; Overberg, M. E.; Abernathy, C. R.; Pearton, S. J.; Wilson, R. G.

In: Applied Physics Letters, Vol. 81, No. 4, 22.07.2002, p. 658-660.

Research output: Contribution to journalArticle

Kim, JH, Ren, F, Thaler, GT, Overberg, ME, Abernathy, CR, Pearton, SJ & Wilson, RG 2002, 'Pt Schottky contacts to n-(Ga,Mn)N', Applied Physics Letters, vol. 81, no. 4, pp. 658-660. https://doi.org/10.1063/1.1496130
Kim JH, Ren F, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ et al. Pt Schottky contacts to n-(Ga,Mn)N. Applied Physics Letters. 2002 Jul 22;81(4):658-660. https://doi.org/10.1063/1.1496130
Kim, Ji Hyun ; Ren, F. ; Thaler, G. T. ; Overberg, M. E. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. / Pt Schottky contacts to n-(Ga,Mn)N. In: Applied Physics Letters. 2002 ; Vol. 81, No. 4. pp. 658-660.
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