Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers

Sang Ho Kim, Jeong Tae Maeng, Chel Jong Choi, Jae Hyeon Leem, Myung Soo Han, Tae Yeon Seong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report on the formation of ohmic contacts to As-doped ZnO layers using a Pt/indium tin oxide (ITO) scheme. The As-doped ZnO layer shows p-type conductivity with carrier concentrations of 5.12-9.74×1016 cm-3 when annealed at 25-400°C for 1 min in nitrogen ambient. However, the ZnO layers exhibit n-type characteristics with carrier concentration ca.1018-ca.1019 cm-3 when annealed at 500-800°C. The Pt/ITO contacts produce contact resistivities of 8.0×10-4 - 3.5×10-3 Ω cm2 upon annealing at 300-600°C. Possible ohmic formation mechanisms for the Pt/ITO contacts to the As-doped ZnO layers are described and discussed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number7
DOIs
Publication statusPublished - 2005 Aug 16
Externally publishedYes

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Ohmic contacts
Arsenic
Tin oxides
arsenic
indium oxides
Indium
tin oxides
electric contacts
Carrier concentration
Nitrogen
Annealing
nitrogen
conductivity
electrical resistivity
annealing
indium tin oxide

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers. / Kim, Sang Ho; Maeng, Jeong Tae; Choi, Chel Jong; Leem, Jae Hyeon; Han, Myung Soo; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 7, 16.08.2005.

Research output: Contribution to journalArticle

Kim, Sang Ho ; Maeng, Jeong Tae ; Choi, Chel Jong ; Leem, Jae Hyeon ; Han, Myung Soo ; Seong, Tae Yeon. / Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers. In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 7.
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AU - Seong, Tae Yeon

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