Purification of CdZnTe by electromigration

Kihyun Kim, Sangsu Kim, Jinki Hong, Jinseo Lee, Taekwon Hong, A. E. Bolotnikov, G. S. Camarda, R. B. James

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Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10 -2 -cm 2 /V, compared with that of 1.4-×-10 -3 -cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

Original languageEnglish
Article number145702
JournalJournal of Applied Physics
Issue number14
Publication statusPublished - 2015 Apr 14


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, K., Kim, S., Hong, J., Lee, J., Hong, T., Bolotnikov, A. E., ... James, R. B. (2015). Purification of CdZnTe by electromigration. Journal of Applied Physics, 117(14), [145702]. https://doi.org/10.1063/1.4917460