Abstract
Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10 -2 -cm 2 /V, compared with that of 1.4-×-10 -3 -cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.
| Original language | English |
|---|---|
| Article number | 145702 |
| Journal | Journal of Applied Physics |
| Volume | 117 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2015 Apr 14 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Purification of CdZnTe by electromigration. / Kim, Kihyun; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.
In: Journal of Applied Physics, Vol. 117, No. 14, 145702, 14.04.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Purification of CdZnTe by electromigration
AU - Kim, Kihyun
AU - Kim, Sangsu
AU - Hong, Jinki
AU - Lee, Jinseo
AU - Hong, Taekwon
AU - Bolotnikov, A. E.
AU - Camarda, G. S.
AU - James, R. B.
PY - 2015/4/14
Y1 - 2015/4/14
N2 - Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10 -2 -cm 2 /V, compared with that of 1.4-×-10 -3 -cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.
AB - Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10 -2 -cm 2 /V, compared with that of 1.4-×-10 -3 -cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.
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UR - http://www.scopus.com/inward/citedby.url?scp=84928386800&partnerID=8YFLogxK
U2 - 10.1063/1.4917460
DO - 10.1063/1.4917460
M3 - Article
AN - SCOPUS:84928386800
VL - 117
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 14
M1 - 145702
ER -