Purification of CdZnTe by electromigration

K. Kim; Sangsu Kim; Jinki Hong; Jinseo Lee; Taekwon Hong; A. E. Bolotnikov; G. S. Camarda; R. B. James

doi:10.1063/1.4917460

Purification of CdZnTe by electromigration

K. Kim, Sangsu Kim, Jinki Hong, Jinseo Lee, Taekwon Hong, A. E. Bolotnikov, G. S. Camarda, R. B. James

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10^-2-cm²/V, compared with that of 1.4-×-10^-3-cm²/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

Original language	English
Article number	145702
Journal	Journal of Applied Physics
Volume	117
Issue number	14
DOIs	https://doi.org/10.1063/1.4917460
Publication status	Published - 2015 Apr 14

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Purification of CdZnTe by electromigration",

abstract = "Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10-2-cm2/V, compared with that of 1.4-×-10-3-cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.",

author = "K. Kim and Sangsu Kim and Jinki Hong and Jinseo Lee and Taekwon Hong and Bolotnikov, {A. E.} and Camarda, {G. S.} and James, {R. B.}",

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AU - Kim, K.

AU - Kim, Sangsu

AU - Hong, Jinki

AU - Lee, Jinseo

AU - Hong, Taekwon

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - James, R. B.

PY - 2015/4/14

Y1 - 2015/4/14

N2 - Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10-2-cm2/V, compared with that of 1.4-×-10-3-cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

AB - Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10-2-cm2/V, compared with that of 1.4-×-10-3-cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

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Purification of CdZnTe by electromigration

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