Purification of CdZnTe by electromigration

K. Kim, Sangsu Kim, Jinki Hong, Jinseo Lee, Taekwon Hong, A. E. Bolotnikov, G. S. Camarda, R. B. James

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20-V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15-μm/h in an electric field of 20-V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91-×-10-2-cm2/V, compared with that of 1.4-×-10-3-cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

Original languageEnglish
Article number145702
JournalJournal of Applied Physics
Issue number14
Publication statusPublished - 2015 Apr 14

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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